| Allicdata Part #: | SPW24N60C3FKSA1-ND |
| Manufacturer Part#: |
SPW24N60C3FKSA1 |
| Price: | $ 5.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 24.3A TO-247 |
| More Detail: | N-Channel 650V 24.3A (Tc) 240W (Tc) Through Hole P... |
| DataSheet: |  SPW24N60C3FKSA1 Datasheet/PDF |
| Quantity: | 249 |
| 1 +: | $ 4.77540 |
| 10 +: | $ 4.26258 |
| 240 +: | $ 3.49519 |
| 720 +: | $ 2.83024 |
| 1200 +: | $ 2.38696 |
Specifications
| Vgs(th) (Max) @ Id: | 3.9V @ 1.2mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | PG-TO247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 240W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 15.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24.3A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
Description
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SPW24N60C3FKSA1 is a n-channel power MOSFET transistor produced by Infineon Technologies. This device is suitable for use in advanced switching, power amplifier and motor control applications.
The SPW24N60C3FKSA1 is built with a silicon millimeter wave technology, and features an advanced four layer structure for increased efficiency and performance. It has a logic level gate drive that requires a source voltage of only 10 V for maximum on-state linearity. This device can handle an operating temperature range of -55°C to 175°C.
The on-state resistance of the SPW24N60C3FKSA1 is very low (RDS(on) = 0.0085 Ω @ VGS = 10 V), allowing it to handle higher levels of current. It also has a low gate charge (QG) of 2.2 nC which allows it to respond quickly to electrical signals. The maximum drain to source voltage (VDS) rating is 600 V, while the maximum drain current (ID) rating is 485 A.
The SPW24N60C3FKSA1 is a power MOSFET, which means that it uses a voltage-controlled gate to create an insulation layer between the source and drain terminals. This insulation layer, known as the channel, provides efficient electrical conduction without any actual physical contact between the terminals. When the gate of the SPW24N60C3FKSA1 is activated by an electrical signal, it creates a conductive channel between the source and drain terminals, allowing current to flow.
The SPW24N60C3FKSA1 can be used in a variety of applications such as high efficiency switching, power amplifier and motor control applications. In switching applications, the SPW24N60C3FKSA1 provides high-speed, low-power switch activation and deactivation. In power amplifier applications, the SPW24N60C3FKSA1 can provide high current, low-distortion linear amplification. And in motor control applications, the SPW24N60C3FKSA1 can be used to form a low-resistance, low-noise conduction path between the source and drain of a power amplifier.
The SPW24N60C3FKSA1 is an ideal choice for high-efficiency, high-power applications. Its low RDS(on) rating and low gate charge, combined with its high current capabilities, make it an excellent choice for a wide variety of applications. The SPW24N60C3FKSA1 is a reliable device that will provide consistent results.
The specific data is subject to PDF, and the above content is for reference
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