IRGB4620DPBF Allicdata Electronics

IRGB4620DPBF Discrete Semiconductor Products

Allicdata Part #:

IRGB4620DPBF-ND

Manufacturer Part#:

IRGB4620DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 32A 140W TO220
More Detail: IGBT 600V 32A 140W Through Hole TO-220AC
DataSheet: IRGB4620DPBF datasheetIRGB4620DPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 140W
Supplier Device Package: TO-220AC
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 68ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Td (on/off) @ 25°C: 31ns/83ns
Gate Charge: 25nC
Input Type: Standard
Switching Energy: 75µJ (on), 225µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Current - Collector Pulsed (Icm): 36A
Current - Collector (Ic) (Max): 32A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRGB4620DPBF is a Single IGBT device developed by Infineon Technologies. It is designed for use in applications such as motor control, UPS, refrigerator, and AC drives. This device features a low on-state voltage drop and a low conduction loss. The device is suitable for soft switching, high switching frequency, and low switching losses in both the on-state and off-state.

An IGBT, or Insulated Gate Bipolar Transistor, is a type of electronic semiconductor. It combines the characteristics of a MOSFET and a bipolar transistor, and is used to amplify and switch current. An IGBT is a three-terminal device in which the two outer terminals are emitter and collector, and the inner one is the gate. The gate is used to control the current flow between the emitter and collector, in much the same way as the base of a BJT would.

The IRGB4620DPBF device is a single IGBT. It has a maximum drain-source voltage (Vds) rating of 600V, a maximum drain current (Id) rating of 80A, and a maximum power dissipation of 530W. The typical output characteristics are locked anti-parallel diode, avalanche energy of 30mJ, and a maximum junction temperature rating of 150°C. The device is available in a TO-220 package.

The working principle of an IGBT is similar to that of a MOSFET. However, the IGBT has a special feature of having a bipolar junction transistor, resulting in a current gain due to the increased capacitance and a low on-state voltage drop. The IGBT is formed by combining a p-type MOSFET and an n-type MOSFET, resulting in an IGBT structure. The p-type MOSFET allows current to flow from the emitter to the collector when the gate is in the ON position, while the n-type allows current to flow from the collector to the emitter when the gate is in the OFF position.

The IRGB4620DPBF Single IGBT is a device that is well suited for applications such as motor control, UPS, refrigerator, and AC drives. It is able to provide low on-state voltage drop and low conduction losses, making it ideal for applications with soft switching and high switching frequency. Additionally, the device is able to handle high power and provide good reliability. The device also features a good thermal performance, ensuring that the device does not overheat even under high temperature operating conditions.

In summary, the IRGB4620DPBF is a Single IGBT device developed by Infineon Technologies. It features a low on-state voltage drop and low conduction loss, making it ideal for applications such as motor control, UPS, refrigerator, and AC drives. The device is able to provide good thermal performance, allowing it to handle high power while remaining reliable. The device is available in a TO-220 package.

The specific data is subject to PDF, and the above content is for reference

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