BSS138NH6327XTSA2

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The BSS138NH6327XTSA2 is a low-voltage N-channel enhancement-mode field-effect transistor (FET). The device is produced with a silicon channel. It has a source-drain voltage rating of -30V and a maximum current rating of -8A. This transistor is utilized in many applications such as high-speed power switching, amplified switching, constant current led controller, and pulsewidth modulation (PWM) LED lighting applications.

The BSS138NH6327XTSA2 field-effect transistor functions by using an electric field to modulate the conductivity of a channel between two terminals, called the source and drain. Its gate terminal is opened and closed to modulate the current flow. These transistors have an extremely low on-state resistance, which makes them ideal for switching applications where power efficiency is critical.

The BSS138NH6327XTSA2 FET has high-frequency operation which allows it to operate up to 5 MHz, making it suitable for high-speed switch applications. It also has a wide range of operating voltages, from -20V to -30V. Additionally, it has excellent high-temperature performance, making it suitable for applications in harsh environments such as automotive or industrial applications.

The BSS138NH6327XTSA2 FET is a single device, which means it has only one gate and one drain terminal. This simplifies its operation and allows it to be used in applications where low-cost is a factor. This small transistor can provide high current switching, making it suitable for high-power applications.

The BSS138NH6327XTSA2 MOSFET offers superior switching characteristics, wide range of operating voltages, and low gate-to-drain charge, making it suitable for a variety of applications. The device is ideal for use in high-speed switch applications, power MOSFET driver applications, constant current LED controller applications, and PWM LED lighting applications. It is also a suitable device for RF switching and power amplifier design.

In summary, the BSS138NH6327XTSA2 is a low-voltage enhancement mode single N-channel FET that is well-suited for applications such as high-speed switch applications, power MOSFET driver applications, constant current LED controllers, and PWM LED lighting applications. It has excellent high-temperature performance, a wide range of operating voltages, and a low on-state resistance. The device is also suitable for RF switching and power amplifier design. With its superior switching characteristics and wide range of applications, the BSS138NH6327XTSA2 MOSFET is an excellent choice for many electronic design applications.

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