Allicdata Part #: | IRF7380QTRPBFCT-ND |
Manufacturer Part#: |
IRF7380QTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 80V 3.6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 80V 3.6A 2W Surfac... |
DataSheet: | IRF7380QTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Base Part Number: | IRF7380QPBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 73 mOhm @ 2.2A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A |
Drain to Source Voltage (Vdss): | 80V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRF7380QTRPBF is a power Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) array. When compared to traditional two-transistor designs that feature an independent short-circuit protection, this array MOSFET incorporates two N-channel High-Voltage Power MOSFET devices in a single package with a reverse blocking feature. The array’s built-in monolithic high-voltage level shifter can provide reliable protection from over-current and over-voltage conditions. It is specifically designed for remote applications where heavy-duty power control is needed.
To be more specific, this MOSFET array features an integrated reverse blocking capability which prevents unintended current flow back into the control power supply. It also has a high input threshold voltage of +9V and a low output threshold voltage of -4.5V. This enables a wide range of input voltage operations and ensures reliable circuit protection. As for the On-Resistance (Rds), the maximum is rated at 1.5 Ohms at 25C, and the device has a maximum continuous drain current of 18 Amps. Furthermore, it has a working junction temperature of -40°C to +135°C.
Moving on, the IRF7380QTRPBF can be used in a variety of power management applications. With its high input and low output voltage threshold, it is well-suited for applications such as LED signage and automotive LED backlighting systems. It can also be used in HID headlamps, and in load current sensing, monitoring and protecting applications. Other noteworthy uses include automotive DC-DC converters, as well as Class-D amplifiers, and current-arc sensitive switching applications.
Now, let us take a look at its working principle. The MOSFET array is essentially two MOSFETs connected in series — one high-side and one low-side — and can be driven independently. The high-side MOSFET has its own gate drive circuit that monitors the output current and can be set to turn off at preset levels. When this happens, the low-side MOSFET also turns off, thus blocking reverse current flow. With the array’s built-in current limit, this process will repeat until the device is turned off manually.
In conclusion, the IRF7380QTRPBF is an efficient MOSFET array that is well-suited for a variety of power management applications. It has a wide range of input and output voltage operations, and its built-in current limit provides reliable circuit protection. With its high current and temperature ratings, it is a great choice for applications that require heavy-duty power control.
The specific data is subject to PDF, and the above content is for reference
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