IRLR3705ZPBF Allicdata Electronics
Allicdata Part #:

IRLR3705ZPBF-ND

Manufacturer Part#:

IRLR3705ZPBF

Price: $ 1.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 42A DPAK
More Detail: N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-P...
DataSheet: IRLR3705ZPBF datasheetIRLR3705ZPBF Datasheet/PDF
Quantity: 3791
1 +: $ 1.30000
10 +: $ 1.26100
100 +: $ 1.23500
1000 +: $ 1.20900
10000 +: $ 1.17000
Stock 3791Can Ship Immediately
$ 1.3
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRLR3705ZPBF is a N-channel MOSFETs produced by Infenion. It has some advantages over other MOSFETs, such as low on-resistance and high speed of switching, making it suitable for applications with high efficiency and low power consumption. This article examines its application field and working principle in detail.

The IRLR3705ZPBF is a logic-level N-channel MOSFET. It is a power device designed to handle current and voltage levels much higher than standard logic gate circuits. It has an on resistance of just 37 milliohms and a current capacity up to 57Amps. Compare to other MOSFETs, IRLR3705ZPBF is designed for applications that require low power consumption, high efficiency and fast switching. Therefore, it is widely used in high-power AC-DC converters, motor drive circuits, DC-DC converters, battery management systems, etc.

The working principle of IRLR3705ZPBF is like other MOSFETs. In a MOSFET, the electrons flow through the source-drain contact to the channel, then through the gate contact to the source-drain contact again. The resistance of the drain-source contact, or the “on resistance” of the MOSFET, is determined by the voltage applied to the gate. When a positive voltage is applied to the gate contact, the resistance is reduced, and the current through the source-drain contact is increased. On the other hand, when a negative voltage is applied to the gate contact, the resistance is increased, and the current through the source-drain contact is decreased.

The IRLR3705ZPBF is designed to have a very low on resistance and a high speed of switching. The low on-resistance means it requires less power to drive the circuit, thus reducing power consumption. The high speed of switching means it can respond almost instantaneously to voltage changes at the gate contact, which is essential for applications that require fast response times. Due to these properties, it is becoming increasingly popular in a variety of applications where power efficiency and performance are required.

In short, the IRLR3705ZPBF is a N-channel MOSFETs with a low on-resistance and high speed of switching. It is widely used in applications that require low power consumption, high efficiency and fast switching. The working principle is like other MOSFETs: The resistance of the drain-source contact is determined by the voltage applied to the gate contact. The IRLR3705ZPBF is becoming a popular choice for high-power AC-DC converters, motor drive circuits, DC-DC converters, battery management systems and other applications that require power efficiency and performance.

The specific data is subject to PDF, and the above content is for reference

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