Infineon decoder interface - Allicdata Electronics

Related Categories

< 186 187 188 189 190 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRFH5302DTRPBF- ND	IRFH5302DTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3635pF @ 25V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	1000 Order	--
IPP16CN10NGHKSA 1-ND	IPP16CN10NGHKSA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 61A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	500+: $0.6401
IRFSL7734PBF-ND	IRFSL7734PBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Power Dissipation (Max): 290W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1000+: $1.0138
IRFS33N15DTRLP- ND	IRFS33N15DTRLP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
AUIRF7769L2TR-N D	AUIRF7769L2TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET Isometric L8	1000 Order	4000+: $1.8119
IRG4PSH71KDPBF- ND	IRG4PSH71KDPBF	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A Power - Max: 350W Switching Energy: 5.68mJ (on), 3.23mJ (off) Input Type: Standard Gate Charge: 410nC Td (on/off) @ 25C: 67ns/230ns Test Condition: 800V, 42A, 5 Ohm, 15V Reverse Recovery Time (trr): 107ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247 (TO-274AA)	11 Order	1+: $8.1018 10+: $7.4485 100+: $6.2909 500+: $5.5962
IRFR024NPBF-ND	IRFR024NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFR5410PBF-ND	IRFR5410PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Power Dissipation (Max): 66W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1726 Order	--
SMBTA56E6327HTS A1TR-ND	SMBTA56E6327HTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MBTA56	1000 Order	36000+: $0.02
BCX52H6327XTSA1 -ND	BCX52H6327XTSA1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	1000 Order	7000+: $0.0689
BSC090N03LSGATM A1TR-ND	BSC090N03LSGATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.1773
IRLR3103PBFTR-N D	IRLR3103TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFZ44EPBF-ND	IRFZ44EPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2011 Order	--
IPP65R190C7FKSA 1-ND	IPP65R190C7FKSA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 290A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V Power Dissipation (Max): 72W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	592 Order	1+: $2.2113 50+: $1.7815 100+: $1.6034 500+: $1.2471 1000+: $1.0333
IPU80R1K4P7AKMA 1-ND	IPU80R1K4P7AKMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 700A Gate Charge (Qg) (Max) @ Vgs: 10.05nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	325 Order	1+: $0.7182 10+: $0.6382 100+: $0.5044 500+: $0.3912 1000+: $0.3089
AIHD10N60RFATMA 1-ND	AIHD10N60RFATMA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 150W Switching Energy: 190J (on), 160J (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25C: 12ns/168ns Test Condition: 400V, 10A, 26 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	1000 Order	2500+: $0.5572
IGP10N60TXKSA1- ND	IGP10N60TXKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Power - Max: 110W Switching Energy: 430J Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25C: 12ns/215ns Test Condition: 400V, 10A, 23 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	1000 Order	500+: $0.5832
IRFR3410PBF-ND	IRFR3410PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Power Dissipation (Max): 3W (Ta), 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	141 Order	--
TT330N16KOFHPSA 2-ND	TT330N16KOFHPSA 2	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 330A Current - On State (It (RMS)) (Max): 520A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Hold (Ih) (Max): 300mA Operating Temperature: 130C (TJ) Mounting Type: Surface Mount Package / Case: Module	57 Order	1+: $100.882
BC847BTE6327-ND	BC 847BT E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	1000 Order	1+: $0
IRFS41N15DPBF-N D	IRFS41N15DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	72 Order	--
BC846BE6327INTR -ND	BC 846B E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BC846	1000 Order	1+: $0
BSP61H6327XTSA1 -ND	BSP61H6327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10A DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Base Part Number: BSP61	1000 Order	1+: $0
IPL60R365P7AUMA 1TR-ND	IPL60R365P7AUMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 365 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4V @ 140A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V Power Dissipation (Max): 46W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	3000 Order	3000+: $0.6973
IPD50N12S3L15AT MA1-ND	IPD50N12S3L15AT MA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	2500+: $0.4697
SPW47N65C3FKSA1 -ND	SPW47N65C3FKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power Dissipation (Max): 415W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	1000 Order	240+: $8.3674
IRG4PC40FD-ND	IRG4PC40FD	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 49A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A Power - Max: 160W Switching Energy: 950J (on), 2.01mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25C: 63ns/230ns Test Condition: 480V, 27A, 10 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	1+: $0
IRG4IBC10UD-ND	IRG4IBC10UD	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 6.8A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Power - Max: 25W Switching Energy: 140J (on), 120J (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25C: 40ns/87ns Test Condition: 480V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	1000 Order	--
IRGS14C40L-ND	IRGS14C40L	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 20A Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A Power - Max: 125W Input Type: Logic Gate Charge: 27nC Td (on/off) @ 25C: 900ns/6s Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	1000 Order	--
IRL3502-ND	IRL3502	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRF9540NSTRR-ND	IRF9540NSTRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 117 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRFR13N20DTRR-N D	IRFR13N20DTRR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRLU3714-ND	IRLU3714	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IRF2804STRL-7P- ND	IRF2804STRL-7P	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	--
IRF3707ZCSPBF-N D	IRF3707ZCSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V Power Dissipation (Max): 57W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRL8113SPBF-ND	IRL8113SPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRFZ48NSPBF-ND	IRFZ48NSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRLI3803PBF-ND	IRLI3803PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
IRFR3711ZPBF-ND	IRFR3711ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.45V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRLR3715ZPBF-ND	IRLR3715ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--

< 186 187 188 189 190 >

Hot Searches: infineon decoder interface on decoder interface infineon encoder interface infineon converter interface adsantec decoder interface analog decoder interface akm decoder interface broadcom decoder interface burr decoder interface cirrus decoder interface conexant decoder interface cypress decoder interface fairchild decoder interface freescale decoder interface kinnum decoder interface harris decoder interface holtek decoder interface intersil decoder interface lantic decoder interface linx decoder interface

Search Result:infineon decoder interface

Related Categories