BSC090N03LSGATMA1

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BSC090N03LSGATMA1 is a single-gate field-effect transistor (FET) that is used in many electronic circuits. This FET is a part of an advanced line of parts from ON Semiconductor that features low gate-charge, lower gate resistance, and high-speed switching performance. This transistor can be used in a variety of applications, including power management, signal switching, and motor drive applications.

The BSC090N03LSGATMA1 is a JFET- type FET with an N-channel type. It is rated for a maximum continuous drain-source voltage of 90 volts and a maximum drain current of 7 amps. Its maximum drain-source on-state resistance is 0.27 milliohms, and its input capacitance is 18 pF. This FET is designed to be used in applications where low power, low noise, and low capacitance are desired. Its max junction temperature of 175°C makes it suitable for use in automotive applications.

The working principle of the BSC090N03LSGATMA1 is quite simple. A small electrical signal is applied to the FET’s gate terminal, and the switching action is based on the voltage applied across the drain and source terminals. When the gate signal is low, the drain-source junction is reverse-biased and no current flows through the FET. When the gate is high, the drain-source junction is forward-biased and current can flow through the FET. This signal-dependent switching action is why this FET is ideal for applications where low power, low noise, and low capacitance are desired, such as power management, signal switching, and motor drive applications.

The BSC090N03LSGATMA1 is a versatile FET that is well-suited for a variety of applications. It features low gate-charge, lower gate resistance, and high-speed switching performance; these features make it ideal for use in power management, signal switching, and motor drive applications. Its small size and high temperature rating make it suitable for automotive and high temperature applications. Its simple working principle makes it an easy-to-use and reliable component in any design.

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