Infineon decoder interface - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRGP4266D-EPBF- ND	IRGP4266D-EPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 455W Switching Energy: 2.5mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25C: 50ns/200ns Test Condition: 400V, 75A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	1000 Order	1+: $0
FP40R12KE3BOSA1 -ND	FP40R12KE3BOSA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Power - Max: 210W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 2.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $51.4628
FZ600R12KE4HOSA 1-ND	FZ600R12KE4HOSA 1	Infineon Technologies	View more Part Status: Active Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 600A Power - Max: 3000W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 1.7nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $77.1617
FD300R12KS4B5HO SA1-ND	FD300R12KS4B5HO SA1	Infineon Technologies	View more Part Status: Active Configuration: Single Chopper Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 370A Power - Max: 1950W Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 20nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $79.5452
FF300R17ME3BOSA 1-ND	FF300R17ME3BOSA 1	Infineon Technologies	View more Series: EconoDUAL 3 Part Status: Not For New Designs IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 375A Power - Max: 1650W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 27nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $109.317
FS400R07A3E3BOM A1-ND	FS400R07A3E3BOM A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	16+: $239.077
FS225R17OE4PBOS A1-ND	FS225R17OE4PBOS A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	4+: $274.749
FF1000R17IE4PBO SA1-ND	FF1000R17IE4PBO SA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 1000A Power - Max: 1000000W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 81nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	3+: $438.732
FS450R17OE4PBOS A1-ND	FS450R17OE4PBOS A1	Infineon Technologies	View more Series: EconoPACK+ Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 900A Power - Max: 20mW Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 36nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	4+: $446.762
FF1800R12IE5PBP SA1-ND	FF1800R12IE5PBP SA1	Infineon Technologies	View more Series: PrimePACK3+ Part Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 1800A Power - Max: 20mW Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 98.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	3+: $0.63
PSDC217E3730833 NOSA1-ND	PSDC217E3730833 NOSA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1+: $1.26
IRFL4310TRPBFTR -ND	IRFL4310TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	27500 Order	--
BSC032N04LSATMA 1TR-ND	BSC032N04LSATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 21A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	5000 Order	5000+: $0.3453
SMBT3906E6327HT SA1TR-ND	SMBT3906E6327HT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MBT3906	15000 Order	3000+: $0.0219 6000+: $0.0198 15000+: $0.0172 30000+: $0.0155 75000+: $0.0138 150000+: $0.0115
PTFA181001FV4XW SA1-ND	PTFA181001FV4XW SA1	Infineon Technologies	View more Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 1.88GHz Gain: 16.5dB Voltage - Test: 28V Current Rating: 1A Current - Test: 750mA Power - Output: 100W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37248-2 Base Part Number: PTFA181001	1000 Order	1+: $0
IPG20N06S2L35AT MA1TR-ND	IPG20N06S2L35AT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 27A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Power - Max: 65W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4 Base Part Number: *PG20N06	1000 Order	--
IRFR3504ZPBFTR- ND	IRFR3504ZTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	6000 Order	--
BCR162E6327HTSA 1TR-ND	BCR162E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCR162	1000 Order	36000+: $0.0163
BCR183E6433HTMA 1TR-ND	BCR183E6433HTMA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCR183	1000 Order	40000+: $0.0163
BFP640E6327BTSA 1TR-ND	BFP640E6327BTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4 Base Part Number: BFP640	1000 Order	1+: $0
BFP405FE6327INT R-ND	BFP 405F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 22.5dB Power - Max: 55mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 12mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP405	1000 Order	1+: $0
BCR148SH6433XTM A1TR-ND	BCR148SH6433XTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BCR148S	1000 Order	20000+: $0.0324
IKCM20L60GAXKMA 1-ND	IKCM20L60GAXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 3 Phase Current: 20A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	285 Order	1+: $8.0514 10+: $7.4 280+: $5.9428 560+: $5.5594
IFCM15S60GDXKMA 1-ND	IFCM15S60GDXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 3 Phase Inverter Current: 30A Voltage: 650V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	1000 Order	1+: $10.6974 10+: $9.8286 280+: $7.8936
IRF7303QTRPBFCT -ND	IRF7303QTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.9A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7303QPBF	1000 Order	--
IRFU5305PBF-ND	IRFU5305PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	23027 Order	--
IPP60R165CPXKSA 1-ND	IPP60R165CPXKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790A Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Power Dissipation (Max): 192W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	337 Order	1+: $3.2508 10+: $2.9024 100+: $2.3801 500+: $1.9273 1000+: $1.6254
IRFSL3006PBF-ND	IRFSL3006PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	309 Order	1+: $4.3218 50+: $3.4741 100+: $3.1653 500+: $2.5631 1000+: $2.1617
IPD30N06S4L23AT MA2TR-ND	IPD30N06S4L23AT MA2	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Power Dissipation (Max): 36W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.2016
BCR562E6327HTSA 1TR-ND	BCR562E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Base Part Number: BCR562	12000 Order	3000+: $0.0403 6000+: $0.0351 15000+: $0.0298 30000+: $0.028 75000+: $0.0263
IDK04G65C5XTMA2 -ND	IDK04G65C5XTMA2	Infineon Technologies	View more Series: CoolSiC Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 670A @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1000+: $0.7071
IDK10G65C5XTMA2 -ND	IDK10G65C5XTMA2	Infineon Technologies	View more Series: CoolSiC Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1000+: $1.6293
GATELEADWH406XP SA1-ND	GATELEADWH406XP SA1	Infineon Technologies	View more Part Status: Active	1000 Order	1+: $3.6792
D4810N24TVFXPSA 1-ND	D4810N24TVFXPSA 1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2400V Current - Average Rectified (Io): 4810A Voltage - Forward (Vf) (Max) @ If: 1.078V @ 4000A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 200mA @ 2400V Mounting Type: Chassis Mount Package / Case: DO-200AE Operating Temperature - Junction: -40C ~ 150C	1000 Order	1+: $427.89
BAT64-02WE6327- ND	BAT 64-02W E632 7	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2A @ 30V Capacitance @ Vr, F: 6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: SCD-80 Operating Temperature - Junction: 150C (Max) Base Part Number: BAT64	1000 Order	1+: $0
DD89N16KKHPSA1- ND	DD89N16KKHPSA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	15+: $65.1225
BAS4006WE6327HT SA1TR-ND	BAS4006WE6327HT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal = Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 1A @ 30V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BAS40-06W	1000 Order	1+: $0
IRAC1168-SO8-ND	IRAC1168-SO8	Infineon Technologies	View more Part Status: Obsolete Accessory Type: PCB - Blank Board For Use With/Related Products: IR1168	1000 Order	1+: $0
IPD50R520CPBTMA 1-ND	IPD50R520CPBTMA 1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IRFB7740PBF-ND	IRFB7740PBF	Infineon Technologies	View more Series: StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.7V @ 100A Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 25V Power Dissipation (Max): 143W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--

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