Allicdata Part #: | IRFSL7734PBF-ND |
Manufacturer Part#: |
IRFSL7734PBF |
Price: | $ 1.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 183A TO262 |
More Detail: | N-Channel 75V 183A (Tc) 290W (Tc) Through Hole TO-... |
DataSheet: | IRFSL7734PBF Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.01376 |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 290W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10150pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | HEXFET®, StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 183A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFSL7734PBF is a high voltage N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) used in many electronic devices. It is manufactured by Infineon Technologies, a leading semiconductor manufacturer. The semiconductor is packaged in a small 8-pin leadless package, making it suitable for use in compact electronics applications.
The IRFSL7734PBF MOSFET is designed for applications that use high frequency signals, such as switching power supplies, motor control circuits, and power converters. It can handle high condition currents and is ideal for applications where the input resistance must be kept high while the output resistance is kept low. The device can also be used in low voltage circuit applications, such as low voltage analog circuits.
The IRFSL7734PBF transistor is a single MOSFET device that consists of three distinct sections. The sections are a Source, a Drain and a Gate. The Source is the terminal that supplies the current to the device when a voltage is applied to the Gate. The Drain is the terminal that collects the output from the device when a voltage is applied to the Gate. The Gate can be considered as the control element, it activates the device when a voltage is applied. The voltage applied to the Gate is regulated by a Gate Voltage Control (GVC).
The working principle of the IRFSL7734PBF is based on the phenomenon of MOSFETs; the current flowing from the Source to the Drain is proportional to the voltage applied to the Gate. The increase of the Gate to Source Voltage (VGS) increases the current flowing from the Source to the Drain, while the decrease of the Gate to Source Voltage (VGS) decreases the current flowing from the Source to the Drain. The current flowing from the Source to the Drain is limited by the maximum drain to source voltage (VDS) and the maximum current rating of the device.
The major applications of the IRFSL7734PBF include power converters, DC to DC converters, motor drivers, switching power supplies, and other high voltage and high frequency switching applications. The device is also suitable for use in analog circuits such as audio amplifiers and low voltage power supplies. It is an ideal solution for applications that require low power consumption with high efficiency.
The IRFSL7734PBF is an excellent device for applications that require high frequency signals and low-voltage power supplies. With its small 8-pin leadless package, it is an ideal choice for use in portable electronic devices as well as in high power systems. The device is also rated to operate up to 175 degrees Celsius, making it an excellent choice for applications that require high temperature operation.
The specific data is subject to PDF, and the above content is for reference
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