AUIRF7769L2TR Allicdata Electronics
Allicdata Part #:

AUIRF7769L2TR-ND

Manufacturer Part#:

AUIRF7769L2TR

Price: $ 2.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 375A DIRECTFET
More Detail: N-Channel 100V 375A (Tc) 3.3W (Ta), 125W (Tc) Surf...
DataSheet: AUIRF7769L2TR datasheetAUIRF7769L2TR Datasheet/PDF
Quantity: 1000
1 +: $ 2.02000
10 +: $ 1.95940
100 +: $ 1.91900
1000 +: $ 1.87860
10000 +: $ 1.81800
Stock 1000Can Ship Immediately
$ 2.02
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: DirectFET™ Isometric L8
Supplier Device Package: DIRECTFET L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AUIRF7769L2TR is a type of single N-channel HEXFET Power MOSFET that is used in a wide range of applications. The device was designed and manufactured by International Rectifier, and is part of the HEXFET Power MOSFET range of products, which are considered to be some of the highest performance, highest reliability, and most efficient devices in their class. The AUIRF7769L2TR is a compact and efficient solution for applications requiring extremely high switching frequencies and low ‘on-state’ resistance.

This device has a wide array of features designed to provide excellent performance in all applications. The AUIRF7769L2TR has an extremely low on-resistance of 1.4 Ohms and a high Maximium current of 50A, making it suitable for applications requiring high power switching. The device also features a Low Total Gate Charge, which reduces switching time and improves the efficiency of the system. Furthermore, the device has an optimised reverse transfer capacitance, which provides up to ten times faster switching times compared to other transistors. Additionally, the device has a high Maximum Safe Operating Temperature, allowing it to operate in a wide range of environments.

The working principle of the AUIRF7769L2TR is based on the unique MOSFET technology. When a gate voltage is applied to the device, the voltage created across the source-drain region creates an electron flow which serves to control the drain current. This effectively controls the current flow between the source and drain, and allows the device to be used for various power switching applications.

The AUIRF7769L2TR is used to switch large currents and voltages, and is ideal for applications such as automotive and industrial power supplies, battery chargers, DC/DC converters, AC inverters and motor controllers. The device is also used in other applications such as solar and wind generation, robotics and power conversion.

The AUIRF7769L2TR offers many advantages over other transistor types, such as discrete MOSFETs and BJTs. The device is much more efficient and offers much faster switching, which reduces power losses and improves system performance. Additionally, the device has low ‘on-state’ resistance, which reduces heat generation and can improve system reliability and extend the life of the device.

The AUIRF7769L2TR is a powerful, efficient and reliable solution for a large range of switching applications. With its wide range of features and benefits, the device is perfect for applications where fast, reliable power switching is required.

The specific data is subject to PDF, and the above content is for reference

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