Allicdata Part #: | AUIRF7769L2TR-ND |
Manufacturer Part#: |
AUIRF7769L2TR |
Price: | $ 2.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 375A DIRECTFET |
More Detail: | N-Channel 100V 375A (Tc) 3.3W (Ta), 125W (Tc) Surf... |
DataSheet: | AUIRF7769L2TR Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 1.81192 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | DirectFET™ Isometric L8 |
Supplier Device Package: | DIRECTFET L8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11560pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 74A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 375A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AUIRF7769L2TR is a type of single N-channel HEXFET Power MOSFET that is used in a wide range of applications. The device was designed and manufactured by International Rectifier, and is part of the HEXFET Power MOSFET range of products, which are considered to be some of the highest performance, highest reliability, and most efficient devices in their class. The AUIRF7769L2TR is a compact and efficient solution for applications requiring extremely high switching frequencies and low ‘on-state’ resistance.
This device has a wide array of features designed to provide excellent performance in all applications. The AUIRF7769L2TR has an extremely low on-resistance of 1.4 Ohms and a high Maximium current of 50A, making it suitable for applications requiring high power switching. The device also features a Low Total Gate Charge, which reduces switching time and improves the efficiency of the system. Furthermore, the device has an optimised reverse transfer capacitance, which provides up to ten times faster switching times compared to other transistors. Additionally, the device has a high Maximum Safe Operating Temperature, allowing it to operate in a wide range of environments.
The working principle of the AUIRF7769L2TR is based on the unique MOSFET technology. When a gate voltage is applied to the device, the voltage created across the source-drain region creates an electron flow which serves to control the drain current. This effectively controls the current flow between the source and drain, and allows the device to be used for various power switching applications.
The AUIRF7769L2TR is used to switch large currents and voltages, and is ideal for applications such as automotive and industrial power supplies, battery chargers, DC/DC converters, AC inverters and motor controllers. The device is also used in other applications such as solar and wind generation, robotics and power conversion.
The AUIRF7769L2TR offers many advantages over other transistor types, such as discrete MOSFETs and BJTs. The device is much more efficient and offers much faster switching, which reduces power losses and improves system performance. Additionally, the device has low ‘on-state’ resistance, which reduces heat generation and can improve system reliability and extend the life of the device.
The AUIRF7769L2TR is a powerful, efficient and reliable solution for a large range of switching applications. With its wide range of features and benefits, the device is perfect for applications where fast, reliable power switching is required.
The specific data is subject to PDF, and the above content is for reference
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