IPU80R1K4P7AKMA1 Allicdata Electronics
Allicdata Part #:

IPU80R1K4P7AKMA1-ND

Manufacturer Part#:

IPU80R1K4P7AKMA1

Price: $ 0.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 4A IPAK
More Detail: N-Channel 800V 4A (Tc) 32W (Tc) Through Hole PG-TO...
DataSheet: IPU80R1K4P7AKMA1 datasheetIPU80R1K4P7AKMA1 Datasheet/PDF
Quantity: 325
1 +: $ 0.71820
10 +: $ 0.63819
100 +: $ 0.50444
500 +: $ 0.39122
1000 +: $ 0.30886
Stock 325Can Ship Immediately
$ 0.79
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.05nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPU 80R1K4P7AKMA1 is a type of field effect transistor, more specifically, a metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are current-controlled transistors and are widely used in modern digital integrated circuits. The IPU 80R1K4P7AKMA1 is a single FET designed for a range of applications, such as power supplies, motor drives, automotive applications and motor control. As such, it is an important device in the field of circuit design and engineering.

A field effect transistor works by using gate-source voltage to control the flow of current between the source and the drain of the transistor. When a voltage is applied across the gate and source, a current flows through the channel and the transistor is said to be "on". This current, known as the drain current, is then used to control other components in the circuit. The amount of drain current is controlled by the gate-source voltage, which is set either by a voltage regulator or manually.

The IPU 80R1K4P7AKMA1 is designed to offer high breakdown voltage and low on-resistance to allow for efficient power management. It is able to operate from 2-110 volts, with a maximum drain current of 11.7A. Additionally, the device is rated for a maximum gate-drain voltage of 25V. These are important factors to consider when designing power supplies or automotive applications, as they can help to ensure efficient operation and extended device life.

The IPU 80R1K4P7AKMA1 is a single FET that can be used in a range of circuits with different functions. It can be used as a switch in simple circuits, or as part of a more complex power management system. For example, it can be used to control the flow of current in a power supply circuit, or to regulate the voltage in an automotive application. It is also well-suited for use in motor control circuits, as it can be used to quickly switch current in order to start, stop and reverse motors.

The IPU 80R1K4P7AKMA1 is a versatile device that is suitable for a range of applications, from power supplies to motor control. By combining high breakdown voltage and low on-resistance, it can help to ensure efficient and reliable operation in any circuit. With its ability to quickly switch current, it is an important component for digital integrated circuits and motor control applications. As such, it is an indispensable tool for circuit design and engineering.

The specific data is subject to PDF, and the above content is for reference

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