BSP61H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSP61H6327XTSA1-ND

Manufacturer Part#:

BSP61H6327XTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP DARL 60V 1A SOT223
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 1A 2...
DataSheet: BSP61H6327XTSA1 datasheetBSP61H6327XTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BSP61
Description

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BSP61H6327XTSA1 is a single bipolar transistor with a collector-base breakdown voltage of 600V, a collector current of 3A, and a peak pulse power of 1050mW. It is commonly used in high-voltage, high-efficiency mono amplifier applications. With low turn-on voltage, low offset voltage, and high switching frequency, this transistor can be used in high-power motor control applications.

The BSP61H6327XTSA1 is designed for use in high-power audio and RF frequency amplifier applications. It has a maximum collector-emitter breakdown voltage of 1200V, a maximum collector current of 3A, a maximum collector power of 475mW, and a maximum static current gain of 100. Its high on-state current makes it ideal for use as a switch in high-power audio amplifier applications as well as for driving large inductive loads, such as DC and AC motors.

The BSP61H6327XTSA1 is a NPN device, meaning that the electrons in the base region move toward the collector, thus allowing a current to flow between the collector and the emitter. The base-emitter junction creates a potential barrier, preventing the current from flowing in the reverse direction. This device is also capable of high-speed switching, making it suitable for pulse applications.

The BSP61H6327XTSA1 can also be used in linear amplifier applications, as it has a wide range of operating gains, low output impedance, and low noise. It is capable of driving up to 36W of power, making it suitable for use in high-power linear amplifiers. Additionally, this device is capable of operation up to 100MHz and is compatible with overvoltage and reverse voltage protection.

In conclusion, the BSP61H6327XTSA1 is a high-efficiency, high-voltage single bipolar transistor with low turn-on voltage, low offset voltage, and high switching frequency. It is suitable for use in high-power audio and RF frequency amplifier applications, motor control, power switching, and linear amplifiers. It is capable of driving up to 36W of power, making it suitable for high-power applications, and is also compatible with overvoltage and reverse voltage protection.

The specific data is subject to PDF, and the above content is for reference

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