
Allicdata Part #: | BSP61H6327XTSA1-ND |
Manufacturer Part#: |
BSP61H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP DARL 60V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 60V 1A 2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1mA, 1A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 500mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BSP61 |
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BSP61H6327XTSA1 is a single bipolar transistor with a collector-base breakdown voltage of 600V, a collector current of 3A, and a peak pulse power of 1050mW. It is commonly used in high-voltage, high-efficiency mono amplifier applications. With low turn-on voltage, low offset voltage, and high switching frequency, this transistor can be used in high-power motor control applications.
The BSP61H6327XTSA1 is designed for use in high-power audio and RF frequency amplifier applications. It has a maximum collector-emitter breakdown voltage of 1200V, a maximum collector current of 3A, a maximum collector power of 475mW, and a maximum static current gain of 100. Its high on-state current makes it ideal for use as a switch in high-power audio amplifier applications as well as for driving large inductive loads, such as DC and AC motors.
The BSP61H6327XTSA1 is a NPN device, meaning that the electrons in the base region move toward the collector, thus allowing a current to flow between the collector and the emitter. The base-emitter junction creates a potential barrier, preventing the current from flowing in the reverse direction. This device is also capable of high-speed switching, making it suitable for pulse applications.
The BSP61H6327XTSA1 can also be used in linear amplifier applications, as it has a wide range of operating gains, low output impedance, and low noise. It is capable of driving up to 36W of power, making it suitable for use in high-power linear amplifiers. Additionally, this device is capable of operation up to 100MHz and is compatible with overvoltage and reverse voltage protection.
In conclusion, the BSP61H6327XTSA1 is a high-efficiency, high-voltage single bipolar transistor with low turn-on voltage, low offset voltage, and high switching frequency. It is suitable for use in high-power audio and RF frequency amplifier applications, motor control, power switching, and linear amplifiers. It is capable of driving up to 36W of power, making it suitable for high-power applications, and is also compatible with overvoltage and reverse voltage protection.
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