
Allicdata Part #: | IRLI3803PBF-ND |
Manufacturer Part#: |
IRLI3803PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 76A TO220FP |
More Detail: | N-Channel 30V 76A (Tc) 63W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220AB Full-Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRLI3803PBF is an advanced N-channel insulated gate field effect transistor (IGFET) from International Rectifier. It is designed for applications that require low on-resistance and low gate charge, such as switching regulators, DC/DC converters, DC motor control, and power supply control.
The IRLI3803PBF is comprised of a silicon cell surrounded by a silicone barrier layer. This allows the device to maintain its high switching performance while having an extremely low on-resistance. The IRLI3803PBF has an operating temperature range of -55°C to +255°C, making it suitable for a wide range of applications.
The IRLI3803PBF is a very versatile device. It is suitable for use in a wide variety of systems, including automotive, communication, industrial, medical, and consumer electronics. In addition, it is compatible with many voltage levels and gate drive requirements, making it ideal for a variety of applications.
The IRLI3803PBF is a enhancement-mode device, which means it requires no external voltage source for switching operations. Instead, the gate voltage is used to control the flow of current through the device. The gate voltage is typically supplied by an external voltage source or by an internal voltage source, such as the power supply or a logic gate.
When a positive gate voltage is applied to the IRLI3803PBF, the current flow through the device is turned on. The higher the gate voltage, the greater the current flow. Conversely, when the gate voltage is reduced, the current flow is reduced accordingly.
The IRLI3803PBF can be used in either depletion-mode or enhancement-mode operation. In depletion-mode operation, the device begins to conduct current when the gate voltage is decreased below the threshold voltage. Conversely, in enhancement-mode operation, the device must be turned on by increasing the gate voltage above the threshold voltage.
The IRLI3803PBF offers many advantages over other N-channel IGFETs. Its low on-resistance and low gate charge make it ideal for high-switching-speed applications. In addition, it has excellent thermal performance and can handle large dynamic load. It is also compatible with a wide range of logic levels, and its low operating voltage makes it suitable for low voltage operation.
The IRLI3803PBF is an ideal choice for many applications, such as switching regulators and DC/DC converters. Its low on-resistance and high switching speed make it suitable for use in high-dynamic-load applications. In addition, its compatibility with a wide range of logic levels makes it suitable for use in complex systems.
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IRLI540N | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 23A TO22... |
IRLI520N | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 8.1A TO2... |
IRLIZ44G | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 30A TO220... |
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IRLIZ34GPBF | Vishay Silic... | -- | 2441 | MOSFET N-CH 60V 20A TO220... |
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