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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SPP47N10L-ND	SPP47N10L	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	--
BB565H7908XTSA1 TR-ND	BB565H7908XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz Capacitance Ratio: 11 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Base Part Number: BB565	1000 Order	1+: $0
BBY5602WH6327XT SA1TR-ND	BBY5602WH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz Capacitance Ratio: 3.3 Capacitance Ratio Condition: C1/C3 Voltage - Peak Reverse (Max): 10V Diode Type: Single Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Base Part Number: BBY56	1000 Order	1+: $0
MMBD7000LT1HTSA 1TR-ND	MMBD7000LT1HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 100V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MMBD7000	75000 Order	3000+: $0.0256 6000+: $0.0222 15000+: $0.0189 30000+: $0.0178 75000+: $0.0167 150000+: $0.0148
BA895E6327-ND	BA 895 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 50mA Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7 Ohm @ 10mA, 100MHz Operating Temperature: 150C (TJ) Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	1000 Order	1+: $0
BAT6806E6327HTS A1TR-ND	BAT6806E6327HTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky - 1 Pair Common Anode Voltage - Peak Reverse (Max): 8V Current - Max: 130mA Capacitance @ Vr, F: 1pF @ 0V, 1MHz Resistance @ If, F: 10 Ohm @ 5mA, 10kHz Power Dissipation (Max): 150mW Operating Temperature: 150C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BAT68-06	1000 Order	1+: $0
BAS28E6327HTSA1 TR-ND	BAS28E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 75V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4 Base Part Number: BAS28	3000 Order	3000+: $0.0426 6000+: $0.0383 15000+: $0.0341 30000+: $0.032 75000+: $0.0284
IRF6655TR1PBF-N D	IRF6655TR1PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 4.2A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 62 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.8V @ 25A Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET SH Package / Case: DirectFET Isometric SH	1000 Order	--
IRF6797MTR1PBFT R-ND	IRF6797MTR1PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 36A (Ta), 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 13V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MX Package / Case: DirectFET Isometric MX	1000 Order	1+: $0
IRF6795MTR1PBFT R-ND	IRF6795MTR1PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 32A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 13V Power Dissipation (Max): 2.8W (Ta), 75W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MX Package / Case: DirectFET Isometric MX	1000 Order	--
IPD170N04NGBTMA 1TR-ND	IPD170N04NGBTMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 10A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPB120N06S402AT MA1TR-ND	IPB120N06S402AT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 140A Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Power Dissipation (Max): 188W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
AUIRFL024N-ND	AUIRFL024N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	--
AUIRFZ44NS-ND	AUIRFZ44NS	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
T830N12TOFXPSA1 -ND	T830N12TOFXPSA1	Infineon Technologies	View more Part Status: Last Time Buy Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 844A Current - On State (It (RMS)) (Max): 1500A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK	1000 Order	1+: $75.8268
IPP80N06S2L06AK SA2-ND	IPP80N06S2L06AK SA2	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V Vgs(th) (Max) @ Id: 2V @ 180A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
AUXHMF1404ZSTRL -ND	AUXHMF1404ZSTRL	Infineon Technologies	View more Part Status: Obsolete	1000 Order	1+: $0
TT400N26KOFHPSA 1-ND	TT400N26KOFHPSA 1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 2.6kV Current - On State (It (AV)) (Max): 510A Current - On State (It (RMS)) (Max): 800A Voltage - Gate Trigger (Vgt) (Max): 2.2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	2+: $185.608
BAV70WH6327XTSA 1TR-ND	BAV70WH6327XTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BAV70W	1000 Order	45000+: $0.016
GATELEAD28134XP SA1-ND	GATELEAD28134XP SA1	Infineon Technologies	View more Part Status: Active	1000 Order	1+: $6.5016
D820N28TXPSA1-N D	D820N28TXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800V Current - Average Rectified (Io): 820A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 750A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 40mA @ 2800V Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Operating Temperature - Junction: -40C ~ 180C	1000 Order	1+: $0
DZ1100N22KHPSA2 -ND	DZ1100N22KHPSA2	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 1100A Voltage - Forward (Vf) (Max) @ If: 1.11V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 80mA @ 2200V Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -40C ~ 150C	1000 Order	1+: $246.613
DZ1070N28KHPSA1 -ND	DZ1070N28KHPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800V Current - Average Rectified (Io): 1070A Voltage - Forward (Vf) (Max) @ If: 1.52V @ 3400A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150mA @ 2800V Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -40C ~ 150C	1000 Order	1+: $297.165
SIDC14D60C6Y-ND	SIDC14D60C6Y	Infineon Technologies	View more Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 27A @ 600V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40C ~ 175C Base Part Number: SIDC14D60	1000 Order	1+: $0
BAT54B5003INTR- ND	BAT 54 B5003	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2A @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150C (Max) Base Part Number: BAT54	1000 Order	1+: $0
BAV99UE6359HTMA 1-ND	BAV99UE6359HTMA 1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Configuration: 2 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	1000 Order	1+: $0
IRDC5001-LS48V- ND	IRDC5001-LS48V	Infineon Technologies	View more Part Status: Obsolete Type: Power Management Function: ORing Controller / Load Share Embedded: No Utilized IC / Part: IR5001 Primary Attributes: Dual -48V Inputs (-36 ~ -75V) are OR-ed, Up to 200W Loads Supplied Contents: Board(s)	1000 Order	1+: $0
FB20R06W1E3B11H OMA1-ND	FB20R06W1E3B11H OMA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 29A Power - Max: 94W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.1nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	24+: $20.1085
SGB10N60AATMA1T R-ND	SGB10N60AATMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A Power - Max: 92W Switching Energy: 320J Input Type: Standard Gate Charge: 52nC Td (on/off) @ 25C: 28ns/178ns Test Condition: 400V, 10A, 25 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Base Part Number: 10N60	1000 Order	1+: $0
FS50R12W2T4BOMA 1-ND	FS50R12W2T4BOMA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 83A Power - Max: 335W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 2.8nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	15+: $31.7688
IRF7303PBFTR-ND	IRF7303TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 4.9A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7303PBF	8000 Order	--
FS150R12KE3GBOS A1-ND	FS150R12KE3GBOS A1	Infineon Technologies	View more Series: EconoPACK+ Part Status: Not For New Designs IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 695W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 10.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	4+: $203.865
FF800R17KF6CB2N OSA1-ND	FF800R17KF6CB2N OSA1	Infineon Technologies	View more Part Status: Last Time Buy Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1700V Power - Max: 6250W Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 800A Current - Collector Cutoff (Max): 1.5mA Input Capacitance (Cies) @ Vce: 52nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $0.63
FZ3600R17HP4HOS A2-ND	FZ3600R17HP4HOS A2	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 3600A Power - Max: 21000W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 3600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 295nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $0.63
IRFR6215TRPBFTR -ND	IRFR6215TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	--
BSZ0909NDXTMA1T R-ND	BSZ0909NDXTMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V Power - Max: 17W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	5000 Order	--
IPD90R1K2C3ATMA 1TR-ND	IPD90R1K2C3ATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 310A Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SPW55N80C3FKSA1 -ND	SPW55N80C3FKSA1	Infineon Technologies	View more Series: CoolMOS C3 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 54.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85 mOhm @ 32.6A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 288nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7520pF @ 100V Power Dissipation (Max): 500W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	484 Order	1+: $11.1258 10+: $10.1121 100+: $8.5954
PTFA092211ELV4R 250XTMA1TR-ND	PTFA092211ELV4R 250XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 940MHz Gain: 18dB Voltage - Test: 30V Current - Test: 1.75A Power - Output: 220W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-33288-2	1000 Order	1+: $0
PTFA212001F1V4R 250XTMA1-ND	PTFA212001F1V4R 250XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.14GHz Gain: 15.8dB Voltage - Test: 30V Current - Test: 1.6A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37260-2	1000 Order	1+: $0

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