IRF6797MTR1PBF

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	36A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.4 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:	2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	68nC @ 4.5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5790pF @ 13V
FET Feature:	--
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DIRECTFET™ MX
Package / Case:	DirectFET™ Isometric MX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF6797MTR1PBF Application field and Working Principle

The IRF6797MTR1PBF is a N-Channel voltage-block insulated gate bipolar transistors (IGBT) produced by International Rectifier. It is designed for high frequency and low losses applications. In this article, we will discuss the application fields and the working principles of IRF6797MTR1PBF.

Application Field

The IRF6797MTR1PBF has a rugged construction and packaging design that makes it ideal for many applications. Due to its fast switching performance and predictable characteristics, it is widely used in inverters, converters, uninterruptible power supplies (UPSs) and other industrial applications that require reliable switching and low losses. Additionally, it is also used in power systems where high power density and scalability is needed such as distributed generators and solar-power systems.

Working Principle

As a voltage-block insulated gate bipolar transistor, the IRF6797MTR1PBF works like a traditional transistor. It utilizes an insulated gate to control current flow through the N-type channel. A voltage applied to the gate will alter the channel’s resistance, thus allowing or blocking current from flowing. As the applied voltage is increased, the channel’s resistance decreases and the current flow is maximized. In addition to its traditional functionality, the insulation also allows for higher voltage between the source and drain. This allows for improved insulation between high and low voltage elements, which is especially useful for applications that involve high power components. The IRF6797MTR1PBF also features a low on-state resistance which allows for increased power density, reduced power losses and improved efficiency. Additionally, its fast switching and optimized gate charge characteristics allow for faster switching and better efficiency.

Conclusion

In conclusion, the IRF6797MTR1PBF is a versatile N-Channel voltage-block insulated gate bipolar transistor which can be used in many applications due to its rugged construction, low on-state resistance, fast switching and predictability. It is ideal for high frequency and low losses applications such as inverters, converters, uninterruptible power supplies (UPSs) and distributed power systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description