IRF6797MTR1PBF

Vgs(th) (Max) @ Id:	2.35V @ 150µA
Package / Case:	DirectFET™ Isometric MX
Supplier Device Package:	DIRECTFET™ MX
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5790pF @ 13V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	68nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	1.4 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	36A (Ta), 210A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF6797MTR1PBF Application field and Working Principle

The IRF6797MTR1PBF is a N-Channel voltage-block insulated gate bipolar transistors (IGBT) produced by International Rectifier. It is designed for high frequency and low losses applications. In this article, we will discuss the application fields and the working principles of IRF6797MTR1PBF.

Application Field

The IRF6797MTR1PBF has a rugged construction and packaging design that makes it ideal for many applications. Due to its fast switching performance and predictable characteristics, it is widely used in inverters, converters, uninterruptible power supplies (UPSs) and other industrial applications that require reliable switching and low losses. Additionally, it is also used in power systems where high power density and scalability is needed such as distributed generators and solar-power systems.

Working Principle

As a voltage-block insulated gate bipolar transistor, the IRF6797MTR1PBF works like a traditional transistor. It utilizes an insulated gate to control current flow through the N-type channel. A voltage applied to the gate will alter the channel’s resistance, thus allowing or blocking current from flowing. As the applied voltage is increased, the channel’s resistance decreases and the current flow is maximized. In addition to its traditional functionality, the insulation also allows for higher voltage between the source and drain. This allows for improved insulation between high and low voltage elements, which is especially useful for applications that involve high power components. The IRF6797MTR1PBF also features a low on-state resistance which allows for increased power density, reduced power losses and improved efficiency. Additionally, its fast switching and optimized gate charge characteristics allow for faster switching and better efficiency.

Conclusion

In conclusion, the IRF6797MTR1PBF is a versatile N-Channel voltage-block insulated gate bipolar transistor which can be used in many applications due to its rugged construction, low on-state resistance, fast switching and predictability. It is ideal for high frequency and low losses applications such as inverters, converters, uninterruptible power supplies (UPSs) and distributed power systems.

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