BSZ0909NDXTMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSZ0909NDXTMA1 is an array of 9 N-channel depletion-mode MOSFETs. It is used for analog signal amplification and switching applications. This device is also commonly referred to as an "N-Channel MOSFET Array". The BSZ0909NDXTMA1 is a surface mount device and has a power dissipation capability of 0.6 Watts.

Application Field

BSZ0909NDXTMA1 is commonly used in industrial, automotive and motor applications. It is also used in communication, instrumentation and medical, battery-powered systems. The chip is suitable for use in digital systems that require low level signal sensing and switching. Additionally, it is used in RF applications such as power amplifiers and mixer stages.

Working Principle

The working principle of the BSZ0909NDXTMA1 is based on its integrated nine N-channel depletion-mode MOSFETs. N-channel MOSFETs possess varying degrees of sensitivity to the voltage applied to their gates, which changes their conductive states. When the gate voltage of an N-channel MOSFET device is higher than the source voltage, it will turn on, allowing current to flow from the source to the drain. When the gate voltage is lower than the source voltage, the device will turn off, stopping current from flowing from the source to the drain. By changing the gate voltage, one can switch the on/off state of the device. This can be done by either applying a constant voltage or a pulse voltage to the gate.

The depletion-mode devices contained in the BSZ0909NDXTMA1 are considered to be normally on, meaning that they will be passed current when the gate voltage is Vgs = 0V. As the gate voltage increases, the device will draw current and will not reach full cutoff until it reaches Vgs = 5V. The benefit of this is that the device will be more sensitive to even small differences in gate voltage.

The device also contains a thermal cut-off protection system. This protection system is designed to shut down the device in the event that it is subjected to an excessive current or heat. The thermal protection system utilizes an internal transistor to detect the temperature and switch the MOSFET off when the temperature reaches a certain level. This prevents the device from being damaged by excessive temperatures.

The BSZ0909NDXTMA1 also features a high speed response time, making it ideal for applications that require switching to occur quickly. The device is able to switch on and off in just a few nanoseconds, which makes it suitable for applications that require fast switching.

In conclusion, the BSZ0909NDXTMA1 is an array of nine N-channel depletion-mode MOSFETs, which is suitable for applications that require low level signal sensing and switching. Its low on resistance, high speed response time and thermal cut-off protection make it a great choice for many digital and RF applications.

The specific data is subject to PDF, and the above content is for reference