IPD90R1K2C3ATMA1

Vgs(th) (Max) @ Id:	3.5V @ 310µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	710pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.1A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD90R1K2C3ATMA1 is a state-of-the-art FET (Field Effect Transistor) device that is designed for high-speed switching applications. It is a single type FET device, meaning it has a single gate, which dissipates considerably lower amounts of power compared to dual gate MOSFETs. As a result, it is a desirable switch device for power-sensitive applications. IPD90R1K2C3ATMA1 features a maximum drain current of 500mA, a drain-source voltage of 60V, and an on-resistance of 1.2Ω. Its gate threshold is 1.2V and its gate-source capacitance is 25nf. The device is packaged in a SOT-23-5 package format and has a gate source circuit that provides a fast turn-on/off switching capability. The working principle of the IPD90R1K2C3ATMA1 FET device is based on its ability to control current flow through a channel between the source and drain electrodes, depending on the amount of voltage applied to the gate electrode. When voltage is applied to the gate electrode, it attracts the electrons from the metal to form a field effect which causes the channel between the source and drain to open and current to flow through. On the other hand, when the voltage is low, no current can flow through the channel, thus suppressing its conductivity. IPD90R1K2C3ATMA1 FET devices are mainly used in motor control circuits, where its strong current capacity, low on-resistance, and fast switching speed make them ideal for switching heavy loads. In addition, it can also be used in high frequency applications such as pulse-width modulation (PWM) circuits. The device is also popular in the automotive industry, as it is capable of controlling relays, switches, and other components. The single FET device is also well-suited for battery-powered applications, as it is capable of providing significant power savings compared to other types of FETs due to its low on-resistance and low gate charge. It is also used in current sensing and current sharing applications, where its low on-resistance and low gate-source capacitance facilitate fast response times and accurate current measuring.Overall, the IPD90R1K2C3ATMA1 FET is an excellent choice for high-speed switching applications, motor control circuits, current sensing, current sharing, and battery-powered applications due to its low on-resistance, low gate-source capacitance, and fast switching speed. It is an ideal choice for applications that require low power consumption and accurate current measurement.

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