Allicdata Part #: | AUIRFL024N-ND |
Manufacturer Part#: |
AUIRFL024N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 2.8A SOT-223 |
More Detail: | N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | AUIRFL024N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.3nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Field Effect Transistors (FETs) are semiconductor devices that have a low on-resistance, low input impedance, and high output impedance. The AUIRFL024N is a specifically designed FET device that is part of the family of single MOSFETs. This device is designed to provide a high level of performance and accuracy in a variety of applications. This article will discuss the application field and working principle of the AUIRFL024N.
The AUIRFL024N has been designed to be used in a number of high-speed switching applications. This device provides high switching speeds, which makes it ideal for use in power conversion, high frequency switching, and energy saving applications such as solar inverters, switching power supplies, and drive controllers. The high performance of the AUIRFL024N also makes it ideal for use in other applications such as security systems, high-frequency circuit switching, and high-speed control applications.
The working principle of the AUIRFL024N is quite simple. This device uses a MOSFET (metal-oxide-semiconductor field-effect transistor) to control the amount of current that is flowing through it. The MOSFET has a gate which can be opened and closed by applying a small electric potential to it. When the gate is open, current can flow through the device and when it is closed, no current can flow through it. Thus, by controlling the voltage applied to the gate, the amount of current flowing through the AUIRFL024N can be controlled.
The AUIRFL024N is also capable of providing lower power consumption compared to other FETs. This is due to its high level of efficiency which enables it to consume less power than its competitors. Additionally, the AUIRFL024N has a low input impedance, allowing for a higher level of control over the current passing through it. This makes the device ideal for applications that require precise control of currents. Finally, the device has a low on-resistance, which reduces the power dissipation across the device thereby improving its overall efficiency.
The AUIRFL024N is an ideal choice for a wide range of applications that require precise control of current and high levels of efficiency. Its low on-resistance and low input impedance ensure that this device is capable of providing high levels of performance and accuracy in a variety of applications. Furthermore, its low power consumption makes it an ideal choice for energy saving applications such as solar inverters, drive controllers, and switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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