Parallel flash memory ic - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TC58NVG1S3ETA00 -ND	TC58NVG1S3ETA00	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NYG0S3HBAI6 -ND	TC58NYG0S3HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
TH58NVG2S3HTAI0 -ND	TH58NVG2S3HTAI0	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG1S3HBAI4 -ND	TC58NVG1S3HBAI4	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	26 Order	--
TC58NVG2S0HTA00 -ND	TC58NVG2S0HTA00	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TH58NVG5S0FTA20 -ND	TH58NVG5S0FTA20	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 32Gb (4G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG2S0HBAI4 -ND	TC58NVG2S0HBAI4	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	7459 Order	--
TC58NYG2S0HBAI6 -ND	TC58NYG2S0HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	11 Order	--
TC58NVG2S0FTA00 -ND	TC58NVG2S0FTA00	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG2S0HBAI4 -ND	TC58BVG2S0HBAI4	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	1000 Order	--
TH58NYG3S0HBAI6 -ND	TH58NYG3S0HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	338+: $4.6221
TC58BYG0S3HBAI6 -ND	TC58BYG0S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
TC58NVG0S3HBAI6 -ND	TC58NVG0S3HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
TC58BVG1S3HBAI6 -ND	TC58BVG1S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	1000 Order	--
TC58NYG1S3HBAI6 -ND	TC58NYG1S3HBAI6	Toshiba Memory America, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	459 Order	--
TH58BYG2S3HBAI6 -ND	TH58BYG2S3HBAI6	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	96 Order	1+: $3.8808 10+: $3.5425 25+: $3.4748 50+: $3.451
TH58BVG3S0HTA00 -ND	TH58BVG3S0HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG0S3HTAI0 -ND	TC58BVG0S3HTAI0	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58NVG0S3HTA00 -ND	TC58NVG0S3HTA00	Toshiba Memory America, Inc.	View more Series: TC58NVG0 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I Base Part Number: TC58NVG0	25510 Order	--
TC58BVG1S3HTAI0 -ND	TC58BVG1S3HTAI0	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TH58BVG2S3HTAI0 -ND	TH58BVG2S3HTAI0	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TH58BVG2S3HTA00 -ND	TH58BVG2S3HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	138 Order	--
TC58BVG2S0HTAI0 -ND	TC58BVG2S0HTAI0	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG2S0HTA00 -ND	TC58BVG2S0HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG0S3HTA00 -ND	TC58BVG0S3HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
TC58BVG1S3HTA00 -ND	TC58BVG1S3HTA00	Toshiba Memory America, Inc.	View more Series: Benand Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Access Time: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	1000 Order	--
AS6C62256-55STC NTR-ND	AS6C62256-55STC NTR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-sTSOP	1000 Order	1500+: $0.987
AS6C1008-55SINT R-ND	AS6C1008-55SINT R	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.445", 11.30mm Width) Supplier Device Package: 32-SOP	1000 Order	--
AS7C31025B-12JC N-ND	AS7C31025B-12JC N	Alliance Memory, Inc.	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 12ns Access Time: 12ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	1000 Order	--
AS7C31024B-10TJ CNTR-ND	AS7C31024B-10TJ CNTR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 10ns Access Time: 10ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 32-SOJ	1000 Order	1000+: $1.3817
AS7C3513B-10JCN TR-ND	AS7C3513B-10JCN TR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 512Kb (32K x 16) Write Cycle Time - Word, Page: 10ns Access Time: 10ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	1000 Order	500+: $1.5821
AS7C1026B-12JCN TR-ND	AS7C1026B-12JCN TR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Write Cycle Time - Word, Page: 12ns Access Time: 12ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	1000 Order	1000+: $1.3817
AS7C4096A-20JIN -ND	AS7C4096A-20JIN	Alliance Memory, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Write Cycle Time - Word, Page: 20ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ	1000 Order	190+: $2.683 266+: $2.6727 513+: $2.5059 1007+: $2.3993
AS7C31026B-15JC NTR-ND	AS7C31026B-15JC NTR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Write Cycle Time - Word, Page: 15ns Access Time: 15ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	1000 Order	1000+: $1.3817
1450-1238-5-ND	AS7C4098A-12JIN	Alliance Memory, Inc.	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Write Cycle Time - Word, Page: 12ns Access Time: 12ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	433 Order	1+: $3.2886 16+: $2.987 32+: $2.922 64+: $2.9059 112+: $2.6061 256+: $2.5963 512+: $2.5007 1008+: $2.3775
AS7C31026B-15JC N-ND	AS7C31026B-15JC N	Alliance Memory, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Write Cycle Time - Word, Page: 15ns Access Time: 15ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	1000 Order	--
1450-1439-ND	AS4C4M16SA-7B2C N	Alliance Memory, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Clock Frequency: 143MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-FBGA	348 Order	1+: $1.3923 10+: $1.2537 25+: $1.2338 50+: $1.2304 100+: $1.0994 286+: $1.0637 572+: $1.0597 1144+: $0.987 5148+: $0.893
AS7C3256A-20JCN TR-ND	AS7C3256A-20JCN TR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 20ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	1000 Order	1000+: $0.9954
1450-1215-5-ND	AS7C31026B-10JC N	Alliance Memory, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Write Cycle Time - Word, Page: 10ns Access Time: 10ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	1000 Order	160+: $1.4842 256+: $1.436 512+: $1.4306 1008+: $1.3324 5008+: $1.2056
1450-1232-5-ND	AS7C34098A-10JC N	Alliance Memory, Inc.	View more Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Write Cycle Time - Word, Page: 10ns Access Time: 10ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	1000 Order	160+: $2.606 256+: $2.5963 512+: $2.5007 1008+: $2.3775

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