TC58BVG2S0HTAI0 Allicdata Electronics
Allicdata Part #:

TC58BVG2S0HTAI0-ND

Manufacturer Part#:

TC58BVG2S0HTAI0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 4G PARALLEL 48TSOP I
More Detail: FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parall...
DataSheet: TC58BVG2S0HTAI0 datasheetTC58BVG2S0HTAI0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Benand™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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The TC58BVG2S0HTAI0 is a kind of non-volatile memory made up of NAND flash technology. It has been used in a wide range of applications due to its high density, low power consumption, and wide temperature range. Its 8- and 16-Gigabit densities make it suitable for a variety of applications such as embedded and automotive systems, as well as mobile and storage solutions.

This type of memory is divided into two main types, NOR and NAND. NOR memory is slower but more efficient, while NAND is typically faster, but requires more power. The TC58BVG2S0HTAI0 is a NAND memory device, specifically a single-bit Flash memory device, which means it can hold only one bit at a time. The device consists of 5.8G + 0.4G, 1.8V-3.3V, or 2.5V-3.3V supply voltage, and has a maximum data rate of 1.8Gbps.

The device works by writing and reading data. When writing data, the device first sends an erase command. This erases any existing information in the memory. Then, the write process begins with a write enable command followed by the actual data to be written. After the write enable command is sent, the device will then write the data to the memory cell. When reading data from the device, the device sends a read enable command, followed by the address of the data that is to be read, to the memory cell.

The TC58BVG2S0HTAI0 provides superior reliability with its advanced error correction algorithms. It also offers various beneficial features such as write protection, two-plane read operation, boot block protection, and flexible write performance. These features help to ensure reliability and robustness of data stored in the device.

The TC58BVG2S0HTAI0 is a reliable and powerful tool used in a wide range of applications, such as Automotive Safety Systems, IoT, Wearables, and Data Storage. Its low power consumption, small size and low price make it ideal for these applications. The device also provides superior performance, reliability, and high data integrity.

In conclusion, the TC58BVG2S0HTAI0 is a high performance NAND Flash memory with advanced features which make it suitable for a variety of applications. It is reliable and able to deliver high data integrity, making it ideal for automotive safety systems, IoT, wearables, and data storage. Offering superior reliability and robustness, it provides a powerful tool for various applications.

The specific data is subject to PDF, and the above content is for reference

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