TC58BVG0S3HTA00

Series:	Benand™
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND (SLC)
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

TC58BVG0S3HTA00 is a type of memory element developed by Toshiba, which is a high-performance, highly reliable and highly advanced Nonvolatile Memory (NVM) device. It utilizes a number of advanced technologies to provide a wide range of applications and operations.

Application Field

The TC58BVG0S3HTA00 memory is mainly used for applications in the automotive, telecom and industrial automation markets. It is commonly used in automotive systems, such as ECUs, navigation systems and driver assistance products. It is also suitable for use in various telecom and industrial applications, such as access control systems, home automation and security systems.The TC58BVG0S3HTA00 also has various features designed to ensure reliable operation and maximum efficiency. These features include write-protect, data retention and power-fail protection. It also has a high speed data transfer rate of up to 20MHz.

Working Principle

The TC58BVG0S3HTA00 memory operates by storing data at a particular voltage level, which is determined by a series of capacitors that are charged up when the memory chip is written to. In order to read from the memory, the capacitors are discharged and then the voltage level is compared to the voltage level stored in the memory. If the two voltage levels match, data can be read from the memory.The TC58BVG0S3HTA00 memory also has a number of advanced features, such as error correction and built-in tests. These features ensure that the data stored in the memory is reliable and accurate.The TC58BVG0S3HTA00 memory is also designed to be robust and secure. It has various security features, such as authentication and encryption, which are designed to protect sensitive data. The memory is also designed to be resistant to environmental factors, such as temperature and humidity.

Conclusion

The TC58BVG0S3HTA00 memory is a highly advanced and reliable Nonvolatile Memory (NVM) device designed for use in a variety of different applications. It has a number of features designed to ensure maximum efficiency and reliability, in addition to advanced security features to keep data safe. The memory is a great choice for automotive, telecom and industrial automation applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description