| Allicdata Part #: | TC58NVG2S0HBAI4-ND |
| Manufacturer Part#: |
TC58NVG2S0HBAI4 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Toshiba Memory America, Inc. |
| Short Description: | IC FLASH 4G PARALLEL 63TFBGA |
| More Detail: | FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parall... |
| DataSheet: | TC58NVG2S0HBAI4 Datasheet/PDF |
| Quantity: | 7459 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND (SLC) |
| Memory Size: | 4Gb (512M x 8) |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-TFBGA (9x11) |
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Memory is a critical part of electronic system designs, as it stores and organizes information, making the storage and retrieval of data a reliable and organized process. The TC58NVG2S0HBAI4 is a multi-chip package designed to accelerate the storage and retrieval of data by utilizing NAND flash memory technology. This memory package is used in many applications, including consumer electronics, embedded designs, and automotive, as well as in industrial and medical applications.
In consumer electronics, the TC58NVG2S0HBAI4 provides high-capacity storage for mobile devices and other consumer products. With its high performance and low power requirements, it is the perfect choice for consumer electronics. The memory package also provides data redundancy, ensuring reliability and data protection. With its thermosensitive property, it is highly reliable in high-temperature environments making it a good choice for industrial application.
In embedded designs, the TC58NVG2S0HBAI4 is used to store data for microcontrollers, digital signal processors, and SoC designs. It’s low power consumption and large memory capacity make it an ideal choice for embedded designs. It also provides error correction and ECC support to ensure data integrity and minimize downtime. This makes it well suited for embedded designs, including low-power, minimal downtime applications.
The TC58NVG2S0HBAI4 is also used in automotive applications. The memory package’s high-speed performance and low power consumption make it an ideal choice for automotive infotainment systems and automotive navigation systems. Its low power consumption also allows for reduced emissions, making it a good choice for environmental-friendly, fuel-efficient vehicles.
In industrial and medical applications, the TC58NVG2S0HBAI4 memory package is used in a wide variety of applications. Its high-performance, low power consumption, and rugged design make it perfect for applications in industrial and medical systems. In medical applications, TC58NVG2S0HBAI4 is used for medical imaging, medical data analysis, and medical device testing. In industrial applications, the memory package is used for data logging, industrial automation, and automation process control.
The working principle of the TC58NVG2S0HBAI4 is based on the NAND Flash memory technology. NAND flash memory is composed of several cells that store a bit of information. Inside each cell, there is a source line, a drain line, and two control gates. The logic level of the charge stored in the source and drain lines is read by the two control gates. When used in the TC58NVG2S0HBAI4, the charge is read and then transferred to a storage core. The storage core then stores the data and retrieves it as needed.
With its high performance, low power requirements, and thermosensitive property, the TC58NVG2S0HBAI4 provides an ideal solution for a wide range of applications. Its versatile design makes it perfect for consumer electronics, embedded designs, automotive, and industrial and medical applications. The memory package’s use of NAND Flash technology ensures reliable data storage and retrieval, making it an ideal choice for applications requiring high-capacity, high-speed storage.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TC58CVG2S0HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 4G SPI 104MHZ 16... |
| TC58BVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
| TC58BYG1S3HBAI6 | Toshiba Memo... | 2.74 $ | 1000 | IC FLASH 2G PARALLEL 67VF... |
| TC58NVG0S3HTA00 | Toshiba Memo... | -- | 25510 | IC FLASH 1G PARALLEL 48TS... |
| TC58CYG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
| TC58BVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
| TC58BYG2S0HBAI6 | Toshiba Memo... | 3.56 $ | 191 | IC FLASH 4G PARALLEL 67VF... |
| TC58BVG0S3HBAI4 | Toshiba Memo... | -- | 41 | IC FLASH 1G PARALLEL 63TF... |
| TC58NVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58CVG0S3HRAIG | Toshiba Memo... | -- | 1000 | IC FLASH 1G SPI 104MHZ 8W... |
| TC58NVG3S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 8G PARALLEL 48TS... |
| TC58NVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
| TC58CVG2S0HRAIG | Toshiba Memo... | 5.08 $ | 1000 | IC FLASH 4G SPI 104MHZ 8W... |
| TC58NVG1S3ETAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58CVG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
| TC58NVG2S0HBAI6 | Toshiba Memo... | -- | 37 | IC FLASH 4G PARALLEL 67VF... |
| TC58NVG0S3HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 63TF... |
| TC58BVG0S3HBAI6 | Toshiba Memo... | -- | 14 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG1S3ETA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG1S3HBAI4 | Toshiba Memo... | -- | 26 | IC FLASH 2G PARALLEL 63TF... |
| TC58NVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58BVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58BVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58 | Cornell Dubi... | 0.0 $ | 1000 | CAP ALUM 40UF 250V AXIAL4... |
| TC58NVG2S0HBAI4 | Toshiba Memo... | -- | 7459 | IC FLASH 4G PARALLEL 63TF... |
| TC58NYG2S0HBAI6 | Toshiba Memo... | -- | 11 | IC FLASH 4G PARALLEL 67VF... |
| TC58NVG2S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58BVG0S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
| TC58BVG2S0HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 63TF... |
| TC58BVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58BYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58BVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
| TC58NYG1S3HBAI6 | Toshiba Memo... | -- | 459 | IC FLASH 2G PARALLEL 67VF... |
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TC58NVG2S0HBAI4 Datasheet/PDF