TC58NVG1S3ETA00 Allicdata Electronics
Allicdata Part #:

TC58NVG1S3ETA00-ND

Manufacturer Part#:

TC58NVG1S3ETA00

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parall...
DataSheet: TC58NVG1S3ETA00 datasheetTC58NVG1S3ETA00 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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The TC58NVG1S3ETA00 semiconductor device, which falls within the category of memory devices, is widely used in applications such as personal computers, digital cameras, and communication processes. This particular device provides a secure, high-speed memory for storing data and programs. Aside from its main applications as a data storage component, it can also be used as a support component in various other applications.

The one defining feature of the TC58NVG1S3ETA00 is its high-speed circuit. This feature allows it to perform read and write operations at faster speeds compared to traditional memory devices. In addition, it utilizes a NAND architecture, which makes it more secure and reliable. This device uses a unique non-volatile memory cell, which contains a single transistor that has its own isolated charge storage element. This isolated charge storage element is what enables the device to maintain data integrity even in the event of power loss.

Apart from its fast speed and data integrity features, the TC58NVG1S3ETA00 is also very easy to integrate and is highly versatile. It can be easily integrated into a variety of applications due to its small form factor and low power consumption. Additionally, its architecture allows for the scaling of memory capacity, making it suitable for a variety of memory upgrades. This makes it an ideal fit for applications requiring high capacities and high speeds.

The working principle behind the TC58NVG1S3ETA00 is quite simple. It is a semiconductor device that stores data and instructions on its non-volatile memory cell. When power is applied, the device provides instructions for the retrieving and writing of data. The writes and reads are done quickly due to the use of a unique high-speed architecture. This allows the device to provide both fast read and write operations.

The TC58NVG1S3ETA00 is a highly efficient and reliable semiconductor device that can be used in a variety of applications. It is a secure, fast, and high-capacity device that can be integrated with ease. Its non-volatile memory cell stores data and its high-speed operation allows for fast read and write operations. Its versatility, small size, and low power consumption make it an ideal fit for a variety of applications that require high storage, speed, and data integrity.

Overall, the TC58NVG1S3ETA00 has proven to be a reliable and efficient device for secured data storage, fast read and write operations, and various application scenarios. Thanks to its architecture and easy integration, it is suitable for a variety of processes ranging from digital cameras and communications to personal computing devices. With its advanced functionality, this device is sure to be an important component for any data storage needs.

The specific data is subject to PDF, and the above content is for reference

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