| Allicdata Part #: | TC58BVG1S3HTA00-ND |
| Manufacturer Part#: |
TC58BVG1S3HTA00 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Toshiba Memory America, Inc. |
| Short Description: | IC FLASH 2G PARALLEL 48TSOP I |
| More Detail: | FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parall... |
| DataSheet: | TC58BVG1S3HTA00 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | Benand™ |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND (SLC) |
| Memory Size: | 2Gb (256M x 8) |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 48-TSOP I |
Description
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Memory is the most important part of a computer. It not only stores data but also helps the computer to execute programs. The TC58BVG1S3HTA00 is a type of memory used in computers, mobile phones, and other electronic devices. The TC58BVG1S3HTA00 is a type of NAND flash memory (also known as a NAND memory chip) that is manufactured by Toshiba. It is a high-density non-volatile memory with a capacity of up to 256 Gigabytes (Gb) of storage in a single chip. The TC58BVG1S3HTA00 chip has a very fast read/write speed, making it ideal for applications where quick read/write access is required. The TC58BVG1S3HTA00 is often used in mobile phones and tablets, as they require fast access to data stored on large memory chips. It is also used in other electronic devices such as cameras and game consoles. The chip is designed with a range of features that make it suitable for a wide range of applications. One of these features is its low power consumption, which ensures maximum battery life. The TC58BVG1S3HTA00 works using a principle known as “floating gate technology”. This is where electrons are stored on a “gate” that is suspended within the chip. When certain conditions are met, the electrons can be released from the gate to perform various tasks, such as storing data. The technology also allows for fast write and erase speed, which is why it is ideal for applications that require fast access to data stored on a memory chip. The TC58BVG1S3HTA00 is a cost-effective memory solution for applications that require a fast and reliable storage solution. It has a wide range of features, from low power consumption to high-speed read/write capabilities, making it an ideal choice for a range of applications. It is especially suitable for use in mobile phones and tablets, as these require fast access to stored data on large memory chips. The chip is available in a range of capacities, making it suitable for applications of all sizes. It is also easy to integrate into existing systems, and is compatible with a range of operating systems. The chip is also designed to withstand a wide range of conditions, making it an ideal choice for applications that require robust and reliable memory solutions. In conclusion, the TC58BVG1S3HTA00 is a versatile memory solution that can be used in a wide range of applications. It is a cost-effective solution that offers fast read/write speeds and low power consumption, making it an ideal choice for mobile phones and tablets, as well as other electronic devices.The specific data is subject to PDF, and the above content is for reference
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| TC58NVG1S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
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| TC58CVG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
| TC58NVG2S0HBAI6 | Toshiba Memo... | -- | 37 | IC FLASH 4G PARALLEL 67VF... |
| TC58NVG0S3HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 63TF... |
| TC58BVG0S3HBAI6 | Toshiba Memo... | -- | 14 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG1S3ETA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58NYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG1S3HBAI4 | Toshiba Memo... | -- | 26 | IC FLASH 2G PARALLEL 63TF... |
| TC58NVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
| TC58BVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
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| TC58BVG0S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
| TC58BVG2S0HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 63TF... |
| TC58BVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
| TC58BYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58NVG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
| TC58BVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
| TC58NYG1S3HBAI6 | Toshiba Memo... | -- | 459 | IC FLASH 2G PARALLEL 67VF... |
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TC58BVG1S3HTA00 Datasheet/PDF