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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
US2GATR-ND	US2GA	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5A @ 400V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55C ~ 150C	1000 Order	7500+: $0.0508 15000+: $0.0463 37500+: $0.0434 52500+: $0.0399
NSVMMBD353LT1GO STR-ND	NSVMMBD353LT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 7V Voltage - Forward (Vf) (Max) @ If: 600mV @ 10mA Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10A @ 7V Operating Temperature - Junction: -55C ~ 150C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Base Part Number: MMBD353	3000 Order	3000+: $0.0967 6000+: $0.0904 15000+: $0.0842 30000+: $0.0798 75000+: $0.078
MBR2060CTGOS-ND	MBR2060CTG	ON Semiconductor	View more Series: SWITCHMODE Packaging: Tube Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 60V Operating Temperature - Junction: -65C ~ 175C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Base Part Number: MBR2060CT	1264 Order	--
MUR1615CTGOS-ND	MUR1615CTG	ON Semiconductor	View more Series: SWITCHMODE Packaging: Tube Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5A @ 150V Operating Temperature - Junction: -65C ~ 175C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	829 Order	--
BAV23CLT3G-ND	BAV23CLT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io) (per Diode): 400mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 100nA @ 250V Operating Temperature - Junction: -55C ~ 150C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	1000 Order	--
FEBFL77904-L82L 08A-GEVB-ND	FEBFL77904-L82L 08A-GEVB	ON Semiconductor	View more Series: * Part Status: Obsolete Lead Free Status / RoHS Status: Lead free / RoHS Compliant Supplied Contents: Board(s) Moisture Sensitivity Level (MSL): 1 (Unlimited)	1000 Order	1+: $0
NTMFD4C50NT1G-N D	NTMFD4C50NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Package / Case: 8-PowerTDFN	1000 Order	1500+: $0.5883
NTMFS5C426NT3G- ND	NTMFS5C426NT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	5000+: $0.8006
NVMFS6B05NT1G-N D	NVMFS6B05NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Power Dissipation (Max): 3.8W (Ta), 165W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1500+: $1.5395
NTMFS4C020NT1G- ND	NTMFS4C020NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 47A (Ta), 303A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Power Dissipation (Max): 3.2W (Ta), 134W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	--
BC558ATA-ND	BC558ATA	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BC558	1000 Order	1+: $0
BC308CBU-ND	BC308CBU	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 130MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Base Part Number: BC308	1000 Order	1+: $0
BC328TFR-ND	BC328TFR	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BC328	1000 Order	1+: $0
NVD5807NT4G-VF0 1TR-ND	NVD5807NT4G-VF0 1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V Power Dissipation (Max): 33W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.1658
FQD5N15TMTR-ND	FQD5N15TM	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
KSP8099TA-ND	KSP8099TA	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 625mW Frequency - Transition: 150MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	1000 Order	--
KSC2001OBU-ND	KSC2001OBU	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Power - Max: 600mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Base Part Number: KSC2001	1000 Order	1+: $0
KSA910YSHTA-ND	KSA910YSHTA	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: KSA910	1000 Order	1+: $0
KSP45TF-ND	KSP45TF	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 625mW Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: KSP45	1000 Order	1+: $0
KSA1625KBU-ND	KSA1625KBU	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Power - Max: 750mW Frequency - Transition: 10MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	1000 Order	1+: $0
KSD1273PTSTU-ND	KSD1273PTSTU	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A Current - Collector Cutoff (Max): 100A DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 4V Power - Max: 2W Frequency - Transition: 30MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F Base Part Number: KSD1273	1000 Order	1+: $0
FJPF13009TU-ND	FJPF13009TU	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Power - Max: 50W Frequency - Transition: 4MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F Base Part Number: FJPF13009	1000 Order	1+: $0
FJAF6810DTU-ND	FJAF6810DTU	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 750V Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V Power - Max: 60W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PF Base Part Number: FJAF6810	1000 Order	1+: $0
FQPF8N80CYDTU-N D	FQPF8N80CYDTU	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Power Dissipation (Max): 59W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	135 Order	--
FQP27N25-ND	FQP27N25	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 25.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.75A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	521 Order	--
2N4403RLG-ND	2N4403RLG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: 2N4403	1000 Order	1+: $0
BC337RL1-ND	BC337RL1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 210MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BC337	1000 Order	1+: $0
BC557CGOS-ND	BC557CG	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 320MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Base Part Number: BC557	1000 Order	--
MJD42C1-ND	MJD42C1	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 50A DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 1.75W Frequency - Transition: 3MHz Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Base Part Number: MJD42	1000 Order	1+: $0
MPSW45RLREG-ND	MPSW45RLREG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92 (TO-226) Base Part Number: MPSW45	1000 Order	1+: $0
MSB710-RT1-ND	MSB710-RT1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V Power - Max: 200mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	1000 Order	1+: $0
NDS351ANTR-ND	NDS351AN	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 145pF @ 15V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
MPSA65_D26Z-ND	MPSA65_D26Z	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100A, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: MPSA65	1000 Order	1+: $0
J174FS-ND	J174	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA Resistance - RDS(On): 85 Ohms Power - Max: 350mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Base Part Number: J174	1000 Order	1+: $0
J270_D26Z-ND	J270_D26Z	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA Power - Max: 350mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	1000 Order	1+: $0
JFTJ105-ND	JFTJ105	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 15V Voltage - Cutoff (VGS off) @ Id: 4.5V @ 1A Resistance - RDS(On): 3 Ohms Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	1000 Order	1+: $0
PN5434_D27Z-ND	PN5434_D27Z	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS) Resistance - RDS(On): 10 Ohms Power - Max: 350mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: 2N5434	1000 Order	1+: $0
NTR0202PLT1GOST R-ND	NTR0202PLT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.18nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 5V Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
FDMA86251TR-ND	FDMA86251	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 175 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 75V Power Dissipation (Max): 2.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	6000 Order	--
MJW3281AGOS-ND	MJW3281AG	ON Semiconductor	View more Packaging: Tube Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 2V @ 1A, 10A Current - Collector Cutoff (Max): 50A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7A, 5V Power - Max: 200W Frequency - Transition: 30MHz Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	4888 Order	1+: $2.1483 10+: $1.9316 100+: $1.5828 500+: $1.3474 1000+: $1.1364

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