NVD5807NT4G-VF01 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	33W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	603pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	31 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	23A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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NVD5807NT4G-VF01 is a N-channel,Enhancement-mode, vertical DMOS transistor. It has a dedicated N-channel MOSFET design, making it suitable for high-speed switching applications. The applied field for the NVD5807NT4G-VF01 includes Motor Driver, Power Management, Solid State Relay, and High Voltage Switch.The NVD5807NT4G-VF01 has a wide dynamic operating range from -55° C to 175° C, allowing it to maintain its performance in various temperature ranges. The maximum Gate-Drain voltage it can handle is 600Volts, with a maximum Drain Current of 3 Amperes. The maximum On-State Voltage Drop (Vds) is 1.2 V and the maximum switching ton is 400 ns, providing fast switching and reliable performance. The Rds (on) of the NVD5807NT4G-VF01 is 21 mΩ, resulting in minimal conduction losses.The working principle for NVD5807NT4G-VF01 is based on the semiconductor effect. The Gate of the transistor acts as an electric field that, when a voltage is applied, creates a channel in the channel between the Source and the Drain, allowing electrons to flow from the Source to the Drain. When the voltage across the terminals is increased, the electric field increases, so the volume of electrons travelling through the channel is increased while the resistance decreases. Therefore, it can be used as a switch to control the flow of electrons, as well as a voltage amplifier and signal modifier.The structure of the NVD5807NT4G-VF01 consists of a single N-channel MOSFET on a submicron vertical DMOS silicon chip. The device consists of a Gate oxide layer, which insulates the Gate from the Silicon body, and a insulated Gate electrode, which is formed on the oxide layer. The Source, Drain and Body contacts are formed on the same substrate, and are connected to the bulk semiconductor material. The Source and Drain of the device are connected to the gate through an n-type channel, making it suitable for unipolar applications.In addition, the NVD5807NT4G-VF01 is protected from electrostatic discharge (ESD) protection. It includes an internally integrated ESD protection circuit, which detects the presence of an applied electric field, and switches on a Flag Leakage Current to prevent destroyed components due to ESD induced voltage.The NVD5807NT4G-VF01 is designed to meet the requirements of high speed switching applications. It features a low gate charge and fast switching times, making it suitable for high-speed switching operations. In addition, its fast switching times and low power dissipation make it ideal for power management and other applications where fast switching times are a requirement. Furthermore, its integrated ESD protection provides additional safety and protection, making the device a perfect solution for high-voltage applications.

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