NVMFS6B05NT1G Allicdata Electronics
Allicdata Part #:

NVMFS6B05NT1G-ND

Manufacturer Part#:

NVMFS6B05NT1G

Price: $ 1.71
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 104A SO8FL
More Detail: N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount...
DataSheet: NVMFS6B05NT1G datasheetNVMFS6B05NT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 1.53950
Stock 1000Can Ship Immediately
$ 1.71
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
FET Feature: --
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN
Description

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NVMFS6B05NT1G is a single N-Channel GigFET power MOSFET that has been designed specifically for a variety of load switching and power management applications. It is a surface mount type transistor and requires the correct soldering technique and proper furnace process to ensure optimal mounting and uniform soldering. NVMFS6B05NT1G is available in both an SMD and through-hole package for easy implementation.

The NVMFS6B05NT1G is a feature-rich power MOSFET which supports a variety of applications. It includes an N channel enhancement, which allows for an increase in the current ratings. Additionally, the NVMFS6B05NT1G is able to with stand a wide range of voltages from 18V to 30V.

The NVMFS6B05NT1G is capable of switching up to 15A of current and it can be used in a wide range of applications including LED and switch mode power supply (SMPS) circuits, DC-DC converters, power over Ethernet (PoE), as well as application requiring high-frequency/low on-resistance switching. It is ideal for use in harsh environments where heat, impact and vibration immunity are required.

The working principle of NVMFS6B05NT1G can be best explained with an example of a switch mode power supply (SMPS) circuit. When a MOSFET is used in a SMPS circuit, it is used to switch power from a voltage source to the load. The NVMFS6B05NT1G provides a perfect platform for this application due to its low on-resistance, which helps to reduce power loss in the circuit. For this to take place, a gate signal is applied to the gate of the MOSFET, which in turn increases the current flow from the source to the load (switch on) or decreases the current flow from the source to the load (switch off). Once the gate signal is removed, the MOSFET reverts back to its original state and the current flow is cut off.

In conclusion, the NVMFS6B05NT1G is a feature-packed MOSFET able to withstand a wide range of voltages while providing low on-resistance properties that allow it to switch up to 15A of current. It is ideal for applications such as LED lighting, switch mode power supplies, DC-DC converters or any application requiring high-frequency/low on-resistance switching. Moreover, its optimized construction allows for easy implementation and it is capable of being mounted in either an SMD or through-hole packages.

The specific data is subject to PDF, and the above content is for reference

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