Allicdata Part #: | NTMFD4C50NT1G-ND |
Manufacturer Part#: |
NTMFD4C50NT1G |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 12A SO8FL |
More Detail: | MOSFET N-CH 30V 12A SO8FL |
DataSheet: | NTMFD4C50NT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.58829 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
Package / Case: | 8-PowerTDFN |
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The NTMFD4C50NT1G is a type of metal–oxide–semiconductor field-effect transistor(MOSFET). It is a single N-channel device designed for use in high-frequency switching applications. This device is particularly suitable for power switches in high-voltage and high-current applications.
The NTMFD4C50NT1G is available in a fast switching, surface-mount package that is ideal for use in high density and lightweight applications. It has a max drain current of 30A, a drain-source breakdown voltage of 500V, and an on-resistance of 16 mΩ at 4.5V. The device can operate over a wide temperature range of -55 to +150°C.
The NTMFD4C50NT1G can be used in a variety of applications, including high-efficiency primary and secondary power switches, high-side and low-side switches in dc-to-dc converters, ac-dc converters, and motor control circuits. It is also suitable for use in power supplies, high-side switches, and lighting applications.
The NTMFD4C50NT1G is a power MOSFET and works on the principle of voltage-controlled current flow between source and drain electrodes. It consists of a gate, drain, and source terminals. The device is designed to be turned on using a positive gate-source voltage. When a positive voltage is applied to the gate terminal, electrons from the substrate are attracted to the oxide and into the channel, creating an inversion layer. This process results in the creation of a conductive channel between the source and drain electrodes, allowing current to flow between them. By controlling the gate voltage, the current flow and power transfer across the MOSFET can be controlled.
The NTMFD4C50NT1G has been specifically designed to provide low on-resistance and low gate charge, allowing it to operate at high speeds while maintaining low power dissipation. Furthermore, its fast switching capability makes it ideal for high frequency applications. Its small package design also helps reduce its form factor and ease of assembly.
In conclusion, the NTMFD4C50NT1G is a highly efficient MOSFET designed for use in high-frequency switching applications. It has a wide operating temperature range and low on-resistance, allowing it to operate at high speeds with low power consumption. Additionally, its small package design makes it well suited for high density and lightweight applications. This makes it an ideal choice for use in power switches, dc-to-dc converters, ac-dc converters, motor control circuits, power supplies, and lighting applications.
The specific data is subject to PDF, and the above content is for reference
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