MJD42C1

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 600mA, 6A
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 3A, 4V
Power - Max:	1.75W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Base Part Number:	MJD42

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The MJD42C1 is a single bipolar junction transistor (BJT) that has a wide range of applications and convenient working principles. Bipolar junction transistors (BJT) are active semiconductor components that can be used in many different voltage and power applications. The MJD42C1 is specifically designed for use in medium-to-high power, and low-to-medium current applications.The MJD42C1 is designed to operate as an NPN type of BJT, meaning that it can be used to switch or amplify AC as well as DC current. This transistor features two P-type and one N-type semiconductor layers that sandwich together a thin insulating layer. This structure provides the BJT with a three-terminal electrical conduction path, which creates the basis for the transistor’s operation. This is the working principle that allows the MJD42C1 to be used in a variety of electrical applications.The MJD42C1 is best used in applications where medium power levels are needed and low to medium current flows between the collector and the emitter. It can be used in power supplies, converters, data switches, contactors, amplifiers and more. The MJD42C1’s low on-state voltage drop and fast turn-off time make it ideal for high-frequency applications.The MJD42C1 has a wide range of features that make it an attractive option for a variety of applications. Its high breakdown voltage allows it to be used in applications where long-term reliability is needed. The low Collector-Emitter Saturation Voltage makes it an excellent choice for low voltage power supplies or high frequency applications. Its low thermal resistance reduces the risk of thermal runaway due to its fast switch-off time. Its package features a high conductivity material, which helps prevent heat sinking and reduces power consumption. The high gain and current gain of the MJD42C1 enable it to be used in applications where high-frequency and high-power demands are needed. Furthermore, its low capacitance and input capacitance helps reduce signal distortion and signal emission. The transistor can also be used to create a signal channel, meaning that it can be used to amplify existing signals. Overall, the MJD42C1 is a versatile transistor that can handle a wide range of applications. From low voltage and low power applications to equipment that requires high-frequency and high-power demands, the MJD42C1 can be used in a variety of ways. It is also an excellent choice for applications that need to be reliable, as it has both a high breakdown voltage and low thermal resistance. With its wide range of features, the MJD42C1 is a great choice for anyone looking for a reliable and efficient switching or amplification solution.

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