FQD5N15TM Discrete Semiconductor Products

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FQD5N15TM is a silicon N-channel enhancement mode power field effect transistor (FET). It was developed for use in a wide variety of applications including those that utilize high side switching for battery powered devices. FQD5N15TM is the latest addition to the popular single FQD5N15TM family, which is known for its high speed and reliability.

The FQD5N15TM is a single N-channel FET that is powered by a single supply voltage. Unlike other N-channel FETs, FQD5N15TM does not require a bias voltage for its operation. This makes FQD5N15TM ideal for applications that require high side switching, such as battery powered devices, where a bias voltage may not be available or may be too costly to implement.

FQD5N15TM is designed to operate with a very low gate-source voltage (VGS) and can handle high gate current. As a result, it can switch quickly at low gate voltages and provide high speed operation. Additionally, FQD5N15TM has a very low on-resistance (RDS(on)) which makes it ideal for applications that require high-current switching with low power losses.

The working principle of FQD5N15TM is quite simple. When the gate voltage is applied, the depletion region underneath the gate increases and the resistance between the source and drain decreases. This allows current to travel easily between the source and the drain. The FQD5N15TM is designed with an optimized body-diode which limits the reverse current, thus increasing the efficiency of the FET.

FQD5N15TM is used in a variety of different applications. It can be used as a high-side switch in power supplies, motor control circuits, as a charge pump switch and for load dump protection. It is also used in displays for high speed switching, in DC-DC converters for low-noise switching, and in automotive and industrial applications for high current applications.

In summary, FQD5N15TM is a high performance single N-channel FET that offers fast switching speeds, low on-resistance, and a single supply voltage for operation, making it ideal for a wide variety of applications. Additionally, its optimized body-diode improves efficiency and helps reduce the chances of reverse currents flowing in the circuit. As a result, FQD5N15TM is an excellent choice for high speed, high current, and low power applications.

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