KSD1273PTSTU Allicdata Electronics
Allicdata Part #:

KSD1273PTSTU-ND

Manufacturer Part#:

KSD1273PTSTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 3A TO-220F
More Detail: Bipolar (BJT) Transistor NPN 60V 3A 30MHz 2W Throu...
DataSheet: KSD1273PTSTU datasheetKSD1273PTSTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 4V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Base Part Number: KSD1273
Description

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KSD1273PTSTU application field and working principle

The KSD1273PTSTU is a single, general-purpose bipolar junction transistor (BJT) that offers a variety of applications. As a NPN Silicon Planar Transistor, it can be used in many types of circuits, especially in circuits requiring high-speed switching and fast switching. In this article, we will take a closer look at the different application fields and the working principle behind the KSD1273PTSTU.

Application fields

The KSD1273PTSTU offers broad application possibilities. Its main purpose is to act as a general-purpose switch, allowing the current to pass from a source to a load. This can make it an ideal choice for circuits requiring high-speed switching; it is also appropriate for circuits that need a fast switching capability. Examples of these circuits include audio amplifiers, switching power supplies, and other electronic or electrical circuitry that requires very fast and reliable switching.

In addition, the KSD1273PTSTU can be used in rectifier circuits, and it can also be used for voltage stabilization. Finally, the transistor can be used for the protection of electronic equipment from the effects of lightning and other transients.

Working Principle

The working principle behind the KSD1273PTSTU involves the use of a junction between two different materials, known as the base and the collector. The applied voltage to the base of the transistor causes a potential difference across the collector-base junction. This potential difference causes a proportional current, known as the collector current, to flow between the collector and the emitter.

The collector current is the most important electrical parameter of a BJT transistor, as it determines the amount of power the transistor can handle. When a large amount of current is drawn from the collector, the transistor becomes saturated, allowing the full voltage to be applied to the base and collector. This is the most common working state for transistors and is also known as the active region.

The transistor is also capable of providing greater amounts of current than it receives, a phenomenon known as current gain. This current gain is determined by the ratio of the collector current to the base current, also known as the current gain β. The higher the ratio, the more current produced, and the higher the gain of the transistor.

Conclusion

The KSD1273PTSTU is a versatile single, general-purpose bipolar junction transistor that offers several application fields. It is commonly used as a high-speed switch and for fast switching, as well as for voltage stabilization and protection from transients. Its working principle involves the use of a junction between two different materials, where a potential difference across the collector-base junction causes a current known as the collector current to flow. This current gain is determined by the ratio of the collector current to the base current, allowing for greater current than what is supplied.

The specific data is subject to PDF, and the above content is for reference

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