Storage interface codec - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP781F-ND	TLP781(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	1000 Order	1+: $0
SSM3J327RLFTR-N D	SSM3J327R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	1000 Order	3000+: $0.0507
2SC2712-YLFTR-N D	2SC2712-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Base Part Number: 2SC2712	81000 Order	3000+: $0.0236 6000+: $0.0213 15000+: $0.0185 30000+: $0.0167 75000+: $0.0148 150000+: $0.0123
SSM3K35CTCL3FTR -ND	SSM3K35CTC,L3F	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100A Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SC-101, SOT-883	30000 Order	10000+: $0.0283
RN1904LF(CTTR-N D	RN1904,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0411
RN2101CT(TPL3)T R-ND	RN2101CT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
RN2108CT(TPL3)T R-ND	RN2108CT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
TLP185(GRE)-ND	TLP185(GR,E)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 9s, 9s Rise / Fall Time (Typ): 5s, 9s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	842 Order	1+: $0.3276 10+: $0.2344 25+: $0.1913 125+: $0.153 250+: $0.1291 500+: $0.11 1000+: $0.0861 2500+: $0.0789 5000+: $0.0717
TLP352F(D4F)-ND	TLP352F(D4,F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2A, 2A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 125C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Approvals: CSA, cUL, UL, VDE	108 Order	1+: $1.2978 10+: $1.1472 50+: $0.8511 100+: $0.7401
TPS850-ND	TPS850	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Ambient Wavelength: 640nm Proximity Detection: No Output Type: Current Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -30C ~ 85C Mounting Type: Surface Mount Package / Case: 1210 (3225 Metric), 4 Leads	4500 Order	--
DF5A6.8JELMTR-N D	DF5A6.8JE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 6.4V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	8000 Order	4000+: $0.035 8000+: $0.0304 12000+: $0.0259 28000+: $0.0243 100000+: $0.0203
TLP748JTP1FTR-N D	TLP748J(TP1,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Type: SCR Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 4000Vrms Voltage - Off State: 600V Static dV/dt (Min): 5V/s Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 150mA Current - Hold (Ih): 1mA Turn On Time: 15s Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SMD, Gull Wing Supplier Device Package: 6-SMD Approvals: BSI, SEMKO, UR	1000 Order	1500+: $0.4075 3000+: $0.3871 7500+: $0.3784 10500+: $0.3638
TLP2362E-ND	TLP2362(E)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Open Collector Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 100ns, 100ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	1000 Order	1+: $0.7182 10+: $0.5582 25+: $0.4622 125+: $0.3985 250+: $0.3507 500+: $0.3028 1000+: $0.2391 2500+: $0.2231 5000+: $0.2152
TLP292-4(GBE-ND	TLP292-4(GB,E	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	47 Order	1+: $0.9135 10+: $0.7434 50+: $0.5718 100+: $0.5146 250+: $0.4574 500+: $0.3888 1000+: $0.3202 2500+: $0.3042 5000+: $0.2973
TLP184(GB-TPRSE -ND	TLP184(GB-TPR,S E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	1000 Order	3000+: $0.0869
2SK208-GR(TE85L F)TR-ND	2SK208-GR(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Power - Max: 100mW Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	1000 Order	1+: $0
SSM3K339RLFTR-N D	SSM3K339R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	96000 Order	3000+: $0.058
RN2305(TE85LF)C T-ND	RN2305(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	207 Order	1+: $0.189 10+: $0.1701 25+: $0.1227 100+: $0.0954
RN4906FELF(CBTR -ND	RN4906FE,LF(CB	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.0354
RN2310(TE85LF)T R-ND	RN2310(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: RN231*	1000 Order	3000+: $0.0304
T2N7002AKLMTR-N D	T2N7002AK,LM	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power Dissipation (Max): 320mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	15000 Order	3000+: $0.0185
TK40E06N1S1X-ND	TK40E06N1,S1X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 30V Power Dissipation (Max): 67W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $0.693 50+: $0.5538 100+: $0.4846 500+: $0.3758 1000+: $0.2967
CMH08A(TE12LQM) TR-ND	CMH08A(TE12L,Q, M)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10A @ 400V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CMH08	1000 Order	3000+: $0.1746 6000+: $0.1625 15000+: $0.1605
CMZ13(TE12LQM)- ND	CMZ13(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 13V Tolerance: 10% Power - Max: 2W Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 9V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8)	1000 Order	3000+: $0.122
CMZ24(TE12LQM)- ND	CMZ24(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 24V Tolerance: 10% Power - Max: 2W Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 17V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8)	1000 Order	3000+: $0.122
CLH05(T6LNKODQ) -ND	CLH05(T6L,NKOD, Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10A @ 200V Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 150C	1000 Order	1+: $0
TK8P60WRVQTR-ND	TK8P60W,RVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 400A Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 80W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.712
TK20N60WS1VF-ND	TK20N60W,S1VF	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V Power Dissipation (Max): 165W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	30+: $3.7655
74HCU04DTR-ND	74HCU04D	Toshiba Semiconductor and Storage	View more Series: 74HCU Packaging: Tape & Reel (TR) Part Status: Active Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1A Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.3 V ~ 1.2 V Logic Level - High: 1.7 V ~ 4.8 V Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	2500 Order	--
TC74LCX244FK(EL K)TR-ND	TC74LCX244FK(EL ,K)	Toshiba Semiconductor and Storage	View more Series: TC74LCX Packaging: Tape & Reel (TR) Part Status: Not For New Designs Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Output Type: 3-State Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 20-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 20-VSSOP	2500 Order	2500+: $0.1526
TC74LCX08FTELMT R-ND	TC74LCX08FTELM	Toshiba Semiconductor and Storage	View more Series: TC74LCX Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: AND Gate Number of Circuits: 4 Number of Inputs: 2 Voltage - Supply: 2 V ~ 3.6 V Current - Quiescent (Max): 10A Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width) Base Part Number: 74LCX08	1000 Order	1+: $0
TC75S63TULFTR-N D	TC75S63TU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Amplifier Type: CMOS Number of Circuits: 1 Slew Rate: 1 V/s Gain Bandwidth Product: 3.5MHz Current - Input Bias: 1pA Voltage - Input Offset: 1mV Current - Supply: 500A Current - Output / Channel: 4mA Voltage - Supply, Single/Dual (): 2.2 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: UFV	1000 Order	3000+: $0.0832 6000+: $0.0781 15000+: $0.0731 30000+: $0.067 75000+: $0.0645
TC74LCX245FTDKR -ND	TC74LCX245FT(EL )	Toshiba Semiconductor and Storage	View more Series: TC74LCX Packaging: Digi-Reel Part Status: Obsolete Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Output Type: 3-State Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP Base Part Number: 74LCX245	1000 Order	--
TC4052BFTELNTR- ND	TC4052BFTELN	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 160 Ohm Channel-to-Channel Matching (Ron): 4 Ohm Voltage - Supply, Single (V+): 3 V ~ 18 V -3db Bandwidth: 30MHz Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -50dB @ 1.5MHz Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP Base Part Number: 4052	2000 Order	2000+: $0.123
TD62004AFGN-ND	TD62004AFG,N	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Type: Driver Number of Drivers/Receivers: 7/0 Voltage - Supply: 0 V ~ 50 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.173", 4.40mm Width) Supplier Device Package: 16-SOP Base Part Number: TD6200*A	1000 Order	1+: $0
TCR2EE18LM(CTTR -ND	TCR2EE18,LM(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage Dropout (Max): 0.31V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	1000 Order	4000+: $0.0416 8000+: $0.0374 12000+: $0.0333 28000+: $0.0312 100000+: $0.027 200000+: $0.0266
TB6819AFGCELTR- ND	TB6819AFG,C,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Mode: Critical Conduction (CRM) Frequency - Switching: 20Khz ~ 150kHz Current - Startup: 72.5A Voltage - Supply: 10 V ~ 25 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	1000 Order	2000+: $0.3528
TPC8223-HLQ(S-N D	TPC8223-H,LQ(S	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	1000 Order	2500+: $0.3515
RN1418(TE85LF)T R-ND	RN1418(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
RN4608(TE85LF)T R-ND	RN4608(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0

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