TK20N60W,S1VF

Vgs(th) (Max) @ Id:	3.7V @ 1mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	165W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1680pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	48nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	155 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

TK20N60W,S1VF is a single N-type field-effect transistor (FET), also known as an Insulated-Gate Bipolar Transistor (IGBT). It is a three-lead semi-conductor device capable of switching large amounts of power and functions as a solid-state switch. It has a significantly lower on-state resistance compared to bi-polar transistors and is much more efficient. It is used in a variety of electronic circuits, ranging from power converters to motor controllers and audio amplifiers. TK20N60W,S1VF is a popular choice for a variety of applications due to its high-performance, cost-effectiveness and low operating costs.

Applications

TK20N60W,S1VF is a preferred choice for a variety of applications, ranging from industrial to consumer electronics. Its ability to support high currents have made it popular in applications such as motor controllers and inverters, where it is used for switching large currents and voltages. Its low gate threshold voltage and gate-to-source capacitance also make it suitable for use in audio amplifiers and other low-power switching applications. In addition, its high-power handling capabilities also make it well suited for power converters in a variety of applications, including automotive and industrial power applications.

Working principle

The working principle of the TK20N60W,S1VF is based on the field effect theory. It consists of a semiconductor junction between two electrodes, the source and the drain, and a gate terminal. When a voltage is applied to the gate, it creates an electric field within the semiconductor that modulates its conductance. The greater the voltage applied to the gate, the lower the resistance of the semiconductor junction and vice versa. The transistor is then said to be in an “on” state. When the gate voltage is removed, the electric field dissipates and the semiconductor junction returns to its original state, thus changing the device from an “on” state to an “off” state.

Advantages and Disadvantages

TK20N60W,S1VF has significant advantages over traditional bi-polar transistors. It has a high current rating and a low gate-source capacitance, making it ideal for high-power switching applications. In addition, it has a low on-state resistance, making it much more energy efficient than other switching transistors. However, the TK20N60W,S1VF also has some disadvantages. It requires an external heat sink to dissipate the heat generated by the device during operation, which can make installation more complicated. In addition, its relatively slow switching speed and low breakdown voltage limit its application in high-voltage and high-frequency applications.

Conclusion

In conclusion, TK20N60W,S1VF is a highly efficient and cost-effective single N-type FET for a variety of applications. Its advantages include high current rating, low on-state resistance and low gate-source capacitance. Its disadvantages include the need for an external heat sink and a relatively slow switching speed. Despite these drawbacks, TK20N60W,S1VF is a popular choice for a variety of circuit applications, ranging from motor controllers to audio amplifiers.

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