Allicdata Part #: | SSM3K339RLFTR-ND |
Manufacturer Part#: |
SSM3K339R,LF |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 40V 2A SOT-23F |
More Detail: | N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount SOT-23... |
DataSheet: | SSM3K339R,LF Datasheet/PDF |
Quantity: | 96000 |
3000 +: | $ 0.05796 |
Vgs(th) (Max) @ Id: | 1.2V @ 1mA |
Package / Case: | SOT-23-3 Flat Leads |
Supplier Device Package: | SOT-23F |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 130pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 1.1nC @ 4.2V |
Series: | U-MOSVII-H |
Rds On (Max) @ Id, Vgs: | 185 mOhm @ 1A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SSM3K339R,LF is one of many field-effect transistors (FETs) available in the market. FETs are able to control the flow of electric current based on the electrical properties of the semiconductor material. Some transistors are able to semi-conduct, or stop the flow of current completely. As a single FET, the SSM3K339R,LF is a MOSFET (Metal Oxide Semiconductor FET) and can be used to control the flow of current in either analog or digital circuits.
The SSM3K339R,LF is a JFET (Junction FET) and operates at a voltage rating of 0.3V. The typical gate capacitance of the FET is 15pF, and it has a maximum drain current of 10mA. The drain to source resistance is usually between 500 Ohms and 10K Ohms. Finally, the FET has an approximate power dissipation of 250mW.
The SSM3K339R,LF is commonly used for switching high current loads in automotive applications, such as power management, motor control, and solenoid control. Additionally, it has general application in various analog and digital system designs, such as battery powered applications, timing, and power supply control.
The SSM3K339R,LF operates based on the phenomenon of “field effect,” which is the ability of a voltage applied to the gate terminal of a FET to accelerate or decelerate the flow of current between the source and the drain terminals. The gate terminal on the SSM3K339R,LF is an insulated gate and does not directly conduct current. The insulated gate operates based on Coulomb’s law, which states that when a potential is applied to the gate, a barrier will form in the channel region between the source and the drain. This barrier blocks or allows current to flow, depending on the voltage applied to the gate terminal.
The SSM3K339R,LF has a low on-resistance, which makes it ideal for high current loads. Additionally, it features an integrated reverse avalanche diode, which is useful for protection against transient states. Furthermore, the FET also features a low input capacitance, which allows for higher switching frequency.
The SSM3K339R,LF is one of the most popular MOSFETs in the market due to its wide range of applications and excellent performance. It is easy to use and relatively inexpensive, making it an attractive option for both hobbyists and professionals alike. With its low power dissipation and wide drain current range, it is a great choice for many different electronics projects.
The specific data is subject to PDF, and the above content is for reference
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