RN4906FE,LF(CB Discrete Semiconductor Products |
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Allicdata Part #: | RN4906FELF(CBTR-ND |
Manufacturer Part#: |
RN4906FE,LF(CB |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | RN4906FE,LF(CB Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.03537 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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,The RN4906FE,LF is a transistor array device that is part of the Transistors – Bipolar (BJT) – Arrays, Pre-Biased family of components. This device is a family of low-power three-stage bipolar transistor array featuring monolithic construction of three Darlington connected pairs in one package. This array also includes an internal thermal shutdown circuit and has a maximum power dissipation of 600mW. This device is primarily used in circuit applications such as converters, relays, LED drivers, and zero-voltage crossing detectors.
A basic application for the RN4906FE,LF would involve using the first and third devices of the three-stage array as input and output transistors, respectively. The second device could then be used as a pre-drive or switching transistor. This configuration enables the use of three transistors for the typical bipolar junction transistor (BJT) switching circuit in a single package to reduce the size of the system and reduce power consumption.
The basic working principle of the RN4906FE,LF is the same as any other three-stage BJT array. When a potential difference is applied between the collector and emitter of the input transistor, a current is allowed to flow between them through the base of the pre-drive transistor and into the base of the output transistor. The output of the device is then taken from the collector of the output transistor. As the potential difference between the collector and emitter of the input transistor is increased, the current into the base of the output transistor is increased and the output of the device is accordingly increased.
The RN4906FE,LF array can also include an internal thermal shutdown circuit. This circuit acts as an additional safety precaution in the event that the device is subject to excessive current or power. In the event of over-current or over-power conditions, the internal thermal shutdown circuit will be triggered and the device will shut off to prevent any further damage or malfunctioning.
The RN4906FE,LF is a versatile three-stage BJT array that can be used in a wide variety of circuit applications. It provides a compact, low-power solution for multiple parallel BJT switching circuits that can be used in circuits such as converters, relays, LED drivers, and zero-voltage crossing detectors. Additionally, the inclusion of the internal thermal shutdown circuit offers additional protection in the event of any over-current or over-power conditions.
The specific data is subject to PDF, and the above content is for reference
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