Storage interface codec - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TD62004APGN-ND	TD62004APG,N	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Type: Driver Number of Drivers/Receivers: 7/0 Voltage - Supply: 0 V ~ 50 V Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP Base Part Number: TD6200*A	1000 Order	1+: $0
HN4A56JU(TE85LF )TR-ND	HN4A56JU(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	1000 Order	3000+: $0.0396
RN2902FELF(CTTR -ND	RN2902FE,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0304
2SC2712-OTE85LF TR-ND	2SC2712-OTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	3000 Order	3000+: $0.0228
RN2902FE(T5LFT) TR-ND	RN2902FE(T5L,F, T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
RN4607(TE85LF)T R-ND	RN4607(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
DF2B36FUH3FTR-N D	DF2B36FU,H3F	Toshiba Semiconductor and Storage	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 28V Voltage - Breakdown (Min): 32V Voltage - Clamping (Max) @ Ipp: 40V Current - Peak Pulse (10/1000s): 1A (8/20s) Power - Peak Pulse: 150W Power Line Protection: No Applications: Automotive Capacitance @ Frequency: 6.5pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC	1000 Order	3000+: $0.041 6000+: $0.0369 15000+: $0.0328 30000+: $0.0308 75000+: $0.0273
DF3A3.6FV(TPL3Z )TR-ND	DF3A3.6FV(TPL3, Z)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 2 Voltage - Reverse Standoff (Typ): 1.8V Voltage - Breakdown (Min): 3.4V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 110pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.037 16000+: $0.0315 24000+: $0.0296 56000+: $0.0278
SSM3K72KCTL3FTR -ND	SSM3K72KCT,L3F	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	1000 Order	10000+: $0.0222
RN4902LF(CTTR-N D	RN4902,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	3000 Order	3000+: $0.041 6000+: $0.0369 15000+: $0.0328 30000+: $0.0308 75000+: $0.0273
RN2110CT(TPL3)T R-ND	RN2110CT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
2SA1313-O(TE85L F)TR-ND	2SA1313-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	6000 Order	3000+: $0.038 6000+: $0.0331
SSM3K7002KFLFTR -ND	SSM3K7002KF,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power Dissipation (Max): 270mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.04
SSM3K56ACTL3FTR -ND	SSM3K56ACT,L3F	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	30000 Order	10000+: $0.0452
TA48M03F(T6L1SN Q)TR-ND	TA48M03F(T6L1,S NQ)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 29V Voltage - Output (Min/Fixed): 3V Voltage Dropout (Max): 0.65V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 1.4mA Current - Supply (Max): 25mA PSRR: 70dB (120Hz) Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity Operating Temperature: -40C ~ 85C	1000 Order	1+: $0
TPC8048-HTE12LQ CT-ND	TPC8048-H(TE12L ,Q)	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	1955 Order	1+: $1.449 10+: $1.3104 100+: $1.0527 500+: $0.8188 1000+: $0.6784
TK65A10N1S4X-ND	TK65A10N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 50V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	100 Order	1+: $2.0286 50+: $1.6337 100+: $1.4704 500+: $1.1436 1000+: $0.9476
TK17A80WS4X-ND	TK17A80W,S4X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 850A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 300V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	90 Order	1+: $2.7972 50+: $2.2496 100+: $2.0496 500+: $1.6597 1000+: $1.3997
2SA1931NIKKIQ(J -ND	2SA1931,NIKKIQ( J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SA1931NSEIKIQ( J-ND	2SA1931,NSEIKIQ (J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC6010(T2MITUM FM-ND	2SC6010(T2MITUM ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
1SV311(TPH3F)TR -ND	1SV311(TPH3,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 5.45pF @ 4V, 1MHz Capacitance Ratio: 2.1 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Base Part Number: 1SV311	1000 Order	1+: $0
CRY75(TE85LQM)T R-ND	CRY75(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 7.5V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 4.5V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRY7V5	1000 Order	1+: $0
TPCC8A01-H(TE12 LQMTR-ND	TPCC8A01-H(TE12 LQM	Toshiba Semiconductor and Storage	View more Series: U-MOSV-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
1SS393SULFTR-ND	1SS393SU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 5A @ 40V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: 1SS393SU	1000 Order	1+: $0
CMG02(TE12LQM)- ND	CMG02(TE12L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10A @ 400V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 150C	1000 Order	3000+: $0.1056
TLP5774(TPECT-N D	TLP5774(TP,E	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, cUR, UR, VDE	3949 Order	1+: $1.8396 10+: $1.6304 25+: $1.2099 100+: $1.052 250+: $0.9468 500+: $0.8416
TLP183(GRH-TPLE TR-ND	TLP183(GRH-TPL, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 4 Leads Supplier Device Package: 6-SO, 4 Lead	1000 Order	3000+: $0.08
TLP184(TPRSE-ND	TLP184(TPR,SE	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.0869
CRZ10(TE85L,Q)- ND	CRZ10(TE85L,Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 10V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 6V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRZ10	1000 Order	1+: $0
TC7PCI3212MTLFT R-ND	TC7PCI3212MT,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Applications: PCIe Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Number of Channels: 4 On-State Resistance (Max): 13.5 Ohm Voltage - Supply, Single (V+): 3 V ~ 3.6 V -3db Bandwidth: 11.5GHz Operating Temperature: -40C ~ 85C (TA) Package / Case: 20-UFQFN Exposed Pad Supplier Device Package: 20-TQFN (2.5x4.5)	1000 Order	5000+: $0.3603 10000+: $0.3468
TLP3231FTR-ND	TLP3231(TP15,F)	Toshiba Semiconductor and Storage	View more Series: TLP3231 Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 20V Load Current: 450mA On-State Resistance (Max): 1.2 Ohms Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.165", 4.20mm) Supplier Device Package: 4-SSOP	1000 Order	1500+: $0.8732 3000+: $0.8576
TLP3555(TP1F)-N D	TLP3555(TP1,F)	Toshiba Semiconductor and Storage	View more Series: TLP3555 Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 60V Load Current: 2A On-State Resistance (Max): 200 mOhms Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD	1000 Order	1500+: $1.1642
TLP206GA(TPF)-N D	TLP206GA(TP,F)	Toshiba Semiconductor and Storage	View more Series: TLP206GA Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) x 2 Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 400V Load Current: 120mA On-State Resistance (Max): 35 Ohms Termination Style: Gull Wing Package / Case: 8-SOP (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (2.54mm)	1000 Order	2500+: $1.237
TC7SH125FLJ(CTT R-ND	TC7SH125F,LJ(CT	Toshiba Semiconductor and Storage	View more Series: TC7SH Packaging: Tape & Reel (TR) Part Status: Active Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV Base Part Number: 7SH125	1000 Order	3000+: $0.0416
74HC4066DTS-ND	74HC4066D	Toshiba Semiconductor and Storage	View more Part Status: Active Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 80 Ohm Channel-to-Channel Matching (Ron): 5 Ohm (Typ) Voltage - Supply, Single (V+): 2 V ~ 12 V Switch Time (Ton, Toff) (Max): 12ns, 12ns -3db Bandwidth: 200MHz Channel Capacitance (CS(off), CD(off)): 3pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -60dB @ 1MHz Operating Temperature: -40C ~ 85C Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	1000 Order	--
TLP7920(F-ND	TLP7920(F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Amplifier Type: Isolation Number of Circuits: 1 Output Type: Differential -3db Bandwidth: 230kHz Current - Input Bias: 5.5nA Voltage - Input Offset: 730V Current - Supply: 12mA Voltage - Supply, Single/Dual (): 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 105C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	--
TC7S00FULFTR-ND	TC7S00FU,LF	Toshiba Semiconductor and Storage	View more Series: TC7S Packaging: Tape & Reel (TR) Part Status: Active Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1A Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353 Base Part Number: 7S00	3000 Order	3000+: $0.0567 6000+: $0.0536 15000+: $0.0488 30000+: $0.0457 75000+: $0.041 150000+: $0.0394
TC7WH04FUTDKR-N D	TC7WH04FU(TE12L )	Toshiba Semiconductor and Storage	View more Series: TC7WH Packaging: Digi-Reel Part Status: Discontinued at Digi-Key Logic Type: Inverter Number of Circuits: 3 Number of Inputs: 3 Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2A Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: SM8 Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Base Part Number: 7WH04	1000 Order	1+: $0
TLP7920(D4F-ND	TLP7920(D4,F	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Amplifier Type: Isolation Number of Circuits: 1 Output Type: Differential -3db Bandwidth: 230kHz Current - Input Bias: 5.5nA Voltage - Input Offset: 730V Current - Supply: 12mA Voltage - Supply, Single/Dual (): 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 105C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	43 Order	1+: $3.5784 10+: $2.9799 50+: $2.5031 100+: $2.1455 250+: $1.9071 500+: $1.7283 1000+: $1.5853 2500+: $1.5198

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