TPCC8A01-H(TE12LQM

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The TPCC8A01-H is a single FETs MOSFET transistor that is an integral part of many commercial and industrial applications. It provides reliable performance, good power efficiency and is capable of providing a wide range of gate and drain current levels, allowing for myriad use conditions. Understanding what it does and how it works can help any user of the device enhance its performance or troubleshoot a problematic application.

What is a FET MOSFET?

FET is an acronym for Field Effect Transistor, and most FETs are MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). FETs are unipolar transistors, meaning that they have at minimum three terminals called Source, Gate and Drain, and they use electric fields rather than current in order to control the passage of the current. They are more commonly found in digital circuits.

The TPCC8A01-H and its Working Principles

The TPCC8A01-H is a small signal enhancement type N-Channel FET MOSFET manufactured by Texas Instruments. It provides very low on-resistance and offers IGBT-like performance with JFET-like characteristics. It operates with 4.5 Volts Vgs and can handle a drain current of up to 3 Amperes, while supporting a continuous drain voltage up to 30V. Given its size, it is suitable for high-density circuit boards.

The TPCC8A01-H can be used in a variety of applications, such as amplifier circuits, audio and power speed control, and uC-based switching. It is primarily designed for electronic control circuits in consumer, industrial and automotive applications, including RF transmission and power supplies.

The TPCC8A01-H is an enhancement type MOSFET, which means that its Gate input voltage influences the conductivity of the channel between the Drain and Source. When the Gate terminal is at a positive voltage relative to the Source, a conductive channel appears between the Drain and Source and current can flow. The higher positive voltage applied to the Gate terminal, the lower the resistance of the channel, resulting in higher current flow.

This P-Channel FET MOSFET works with 4.5 Volts gate-to-source voltage, its gate input current (I_GS) is 200mA maximum and its drain-to-source breakdown voltage is up to -30V. Its rated forward transfer admittance is 0.02 S and its avalanche Energy is guaranteed up to 25mJ. Furthermore, its thermal resistance junction-to-ambient is 40°C/W, while its threshold voltage is Max 2V.

Summary

The TPCC8A01-H is a single FETs MOSFET transistor manufactured by Texas Instruments, which is designed for electronic control circuits in consumer, industrial and automotive applications. It provides reliable performance, good power efficiency and is capable of providing a wide range of gate and drain current levels. It works with 4.5 Volts Vgs, provides very low on-resistance and offers IGBT-like performance with JFET-like characteristics, making it suitable for high-density circuit boards.

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