2SA1931,NSEIKIQ(J

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 1V
Power - Max:	2W
Frequency - Transition:	60MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220NIS

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The 2SA1931, NSEIKIQ (J) is an NPN-type bipolar junction transistor. It is a single transistor primarily used in applications such as audio amplifiers, high frequency switching, and signal amplifiers. It is designed to operate at an operating voltage range between 50 and 400 volts.The 2SA1931, NSEIKIQ (J) is a high power-switching transistor that can handle current ratings up to 5A. It has an hFE (beta) of 75-150, an fT of 350MHz, and a low VCE(sat) of 0.35V. It has a high breakdown voltage of 400V with a maximum allowable collector-emitter voltage of 350V. It has a maximum collector power dissipation of 25W at 25℃ ambient temperature. It also has a very wide temperature range operating from -55 to + 150 degrees Celsius.The 2SA1931, NSEIKIQ (J) transistor is used in several applications due to its high-power switching capability, low VCE(sat) , high breakdown voltage, and wide temperature range operating characteristics. It is often used as driver stages for power amplifiers since it can turn on quickly and drive high current. It is also used for high-frequency switching, linear amplification, and for audio amplifiers. It is commonly used as a driver for electric toys, motors, and automotive applications.The working principle of the 2SA1931, NSEIKIQ (J) transistor is based on the traditional bipolar junction transistor structure. It has three terminals, the collector, base and emitter. When the base-emitter voltage is applied, it produces a flow of electrons from the emitter to the collector, forming a channel for the electrons to flow through. This process produces a current amplification between the collector-emitter terminals. The current gain, hFE, can be adjusted using the amount of current injected into the base terminal. The 2SA1931, NSEIKIQ (J) transistor is a popular choice for many applications that require a high power-switching device. Its wide temperature range and ability to handle high currents make it suitable for many different types of projects, including motor controls and audio amplifiers. It is also easily adapted to different voltage levels, making it very versatile. Its high breakdown voltage and low saturation voltage also make it a great choice for use in many different applications.

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