2SA1313-O(TE85L,F)

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The 2SA1313-O(TE85L,F) is a single bipolar transistor. It comes along with a two-electrode construction and a Silicon NPN element. With the help of its important features, it has found usage in a variety of applications.

The power dissipation of this semiconductor is 150 mW with a minimum of 200 mV. Its collector current is of up to 1 A with a collector-base voltage of 30 V. Moreover, it has a collector-emitter voltage of about 15 V and an emitter current of 600 mA.

The 2SA1313-O(TE85L,F) transistor has become popular as an amplifier in all sorts of electronic device applications. In addition, it can be found in the manufacture of communication circuit, audio components and other electronic equipment.

It consists of three dividers – the collector, base and emitter , each of which serves its own purpose. The collector of the transistor dissipates the power supply current, the base of the transistor is its input signal pin, and the emitter of the transistor is its output signal pin.

The main principle behind the working of the 2SA1313-O (TE85L,F) is known as junction bipolar transistor (BJT). It has two junction terminals – the emitter and the collector – and a base terminal which handles the current flow among these two terminals.

The three-terminal structure on the 2SA1313-O (TE85L,F) follows a common-base configuration, meaning that it allows current flow through the entire transistor. It is designed to operate as a voltage-controlled current source meaning that it can supply current but can control its output according to the applied base voltage.

In operation, the transistor receives an input voltage signal at the base terminal. The base current is then used to control the emitter current. The amplified emitter current is then able to control the voltage and current on the collector side. As current goes into the collector side, the collector sends an amplified output signal at the other end.

The 2SA1313-O (TE85L,F) is perfect for small-signal amplifiers and monolithic composite devices that have to handle high-frequency applications. As it has a low power consumption, it functions in a low temperature environment. It is usually used for amplifying voltage and current at low frequency and is especially suitable for a wide range of power-level control applications.

In conclusion, the 2SA1313-O (TE85L,F) is a versatile single bipolar transistor designed for amplifier applications in many areas. It works on the principle of junction bipolar transistors and has three dividers which handle the power supply current, input signal, and output signal respectively. Its low power consumption and wide frequency range makes it a great choice for Voltage and current amplifiers.

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