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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
74VHC574FTTR-ND	74VHC574FT	Toshiba Semiconductor and Storage	View more Series: 74VHC Packaging: Tape & Reel (TR) Part Status: Active Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 115MHz Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Iq): 4A Input Capacitance: 4pF Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	1000 Order	--
TC7WZ74FULJ(CT- ND	TC7WZ74FU,LJ(CT	Toshiba Semiconductor and Storage	View more Series: TC7WZ Packaging: Cut Tape (CT) Part Status: Active Function: Set(Preset) and Reset Type: D-Type Output Type: Push-Pull Number of Elements: 1 Number of Bits per Element: 1 Clock Frequency: 200MHz Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Iq): 10A Input Capacitance: 3pF Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	1000 Order	3000+: $0.0533
TC74VHC04FK(ELK )TR-ND	TC74VHC04FK(EL, K)	Toshiba Semiconductor and Storage	View more Series: TC74VHC Packaging: Tape & Reel (TR) Part Status: Not For New Designs Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2A Current - Output High, Low: 8mA, 8mA Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: 14-VSSOP Package / Case: 14-VFSOP (0.118", 3.00mm Width)	1000 Order	2500+: $0.0947
TC74VHCT540AFTE LTR-ND	TC74VHCT540AFTE L	Toshiba Semiconductor and Storage	View more Series: TC74VHCT Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP Base Part Number: 74VHCT540	1000 Order	1+: $0
TC74HC541APF-ND	TC74HC541APF	Toshiba Semiconductor and Storage	View more Series: TC74HC Packaging: Tube Part Status: Active Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Output Type: 3-State Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-DIP Base Part Number: 74HC541	1000 Order	1+: $0
TC74LVX244FTFTE LMTR-ND	TC74LVX244FTFTE LM	Toshiba Semiconductor and Storage	View more Series: TC74LVX Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Output Type: 3-State Current - Output High, Low: 4mA, 4mA Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP Base Part Number: 74LVX244	1000 Order	1+: $0
TCR2LF36LM(CTTR -ND	TCR2LF36,LM(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.6V Voltage Dropout (Max): 0.3V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2A Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	3000+: $0.0441 6000+: $0.0397 15000+: $0.0353 30000+: $0.0331 75000+: $0.0293 150000+: $0.0282
TLP176AM(E-ND	TLP176AM(E	Toshiba Semiconductor and Storage	View more Series: TLP176AM Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 60V Load Current: 700mA On-State Resistance (Max): 2 Ohms Termination Style: Gull Wing Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Supplier Device Package: 6-SOP	1000 Order	1+: $0.8631 10+: $0.8083 25+: $0.7182 50+: $0.6823 125+: $0.6464 250+: $0.5746 500+: $0.5387 1000+: $0.5027 5000+: $0.4848
TLP3114F-ND	TLP3114(F)	Toshiba Semiconductor and Storage	View more Series: TLP3114 Packaging: Bulk Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 40V Load Current: 250mA On-State Resistance (Max): 3 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	1000 Order	1+: $0
RN1108(T5LFT)TR -ND	RN1108(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
MT3S16U(TE85LF) TR-ND	MT3S16U(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz Gain: 4.5dBi Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	3000 Order	3000+: $0.0635
HN2A01FU-Y(TE85 LFTR-ND	HN2A01FU-Y(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	3000 Order	3000+: $0.032
RN1965FE(TE85LF )TR-ND	RN1965FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
RN2965(TE85LF)T R-ND	RN2965(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
RN2968FE(TE85LF )TR-ND	RN2968FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
SSM5N15FULFTR-N D	SSM5N15FU,LF	Toshiba Semiconductor and Storage	View more Series: -MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	1000 Order	3000+: $0.058
TK14C65WS1Q-ND	TK14C65W,S1Q	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 690A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Power Dissipation (Max): 130W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	38 Order	1+: $2.1735
SSM3J134TULFTR- ND	SSM3J134TU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	6000 Order	3000+: $0.0801
TPH4R10ANLL1Q-N D	TPH4R10ANL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 92A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6.3nF @ 50V Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.4673
TPCC8002-H(TE12 LQTR-ND	TPCC8002-H(TE12 L,Q	Toshiba Semiconductor and Storage	View more Series: U-MOSV-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
2SJ610(TE16L1,N Q)-ND	2SJ610(TE16L1,N Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.55 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 10V Power Dissipation (Max): 20W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TPCA8025(TE12L, Q,M-ND	TPCA8025(TE12L, Q,M	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TPCC8005-H(TE12 LQMTR-ND	TPCC8005-H(TE12 LQM	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 26A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.3V @ 500A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
TLP293-4(TPRETR -ND	TLP293-4(TPR,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.2876 6000+: $0.2811 10000+: $0.2703
TLP5214(E-ND	TLP5214(E	Toshiba Semiconductor and Storage	View more Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 32ns, 18ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.7V (Max) Current - DC Forward (If) (Max): 25mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C Approvals: CQC, cUR, UR, VDE	1000 Order	50+: $3.9501
TLP781GBF-ND	TLP781(GB,F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	1000 Order	1+: $0
TK62N60WS1VF-ND	TK62N60W,S1VF	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 30.9A, 10V Vgs(th) (Max) @ Id: 3.7V @ 3.1mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 400W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	73 Order	1+: $10.773 30+: $9.0607 120+: $8.3259
DF2S6.8UCT(TPL3 )TR-ND	DF2S6.8UCT(TPL3 )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 19V (Max) Voltage - Breakdown (Min): 22V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 1.6pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	1000 Order	1+: $0
TL3GB-LW1LTR-ND	TL3GB-LW1,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Warm CCT (K): 3000K Flux @ 25C, Current - Test: 61 lm (56 lm ~ 66 lm) Current - Test: 100mA Voltage - Forward (Vf) (Typ): 5.76V Lumens/Watt @ Current - Test: 106 lm/W CRI (Color Rendering Index): 80 Current - Max: 200mA Mounting Type: Surface Mount Package / Case: 1212 (3030 Metric) Supplier Device Package: 3030 Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm) Height - Seated (Max): 0.030" (0.77mm) Thermal Resistance of Package: 17C/W	1000 Order	1+: $0
DF2B12M2SCTR-ND	DF2B12M2SC	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 8V (Max) Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 18V (Typ) Current - Peak Pulse (10/1000s): 1A (8/20s) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SC2	1000 Order	1+: $0
DF3A3.3CT(TPL3) TR-ND	DF3A3.3CT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 2 Voltage - Reverse Standoff (Typ): 1V Voltage - Breakdown (Min): 3.1V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 115pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	10000+: $0.036
CRZ13(TE85LQM)- ND	CRZ13(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 13V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 9V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	1000 Order	3000+: $0.1118
RN4602TE85LFTR- ND	RN4602TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
RN1706JE(TE85LF )CT-ND	RN1706JE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	5 Order	1+: $0.3591
RN2963FE(TE85LF )TR-ND	RN2963FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
2SA1837FM-ND	2SA1837(F,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS Base Part Number: 2SA1837	1000 Order	1+: $0
2SA1020-Y(6MBH1 AF-ND	2SA1020-Y(6MBH1 ,AF	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA949-Y(T6SHRP FM-ND	2SA949-Y(T6SHRP ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA949-YF(J-ND	2SA949-Y,F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC1627A-OPASF( M-ND	2SC1627A-O,PASF (M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0

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