RN2902FE,LF(CT Allicdata Electronics

RN2902FE,LF(CT Discrete Semiconductor Products

Allicdata Part #:

RN2902FELF(CTTR-ND

Manufacturer Part#:

RN2902FE,LF(CT

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.2W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2902FE,LF(CT datasheetRN2902FE,LF(CT Datasheet/PDF
Quantity: 1000
4000 +: $ 0.03043
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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RN2902FE,LF is a type of bipolar transistor array that utilizes a pre-biased method. This technology pre-biases the junction between the collector and emitter, allowing for faster switching speeds and higher output power. The device is used in various applications such as high-frequency amplification, signal conditioning, relay control, and power amplification.

The RN2902FE,LF is a PNP-type device that consists of two vertical transistors, stacked on top of each other. The top transistor acts as an input transistor while the bottom transistor acts as an output transistor. The output transistor is pre-biased, so that when an input signal is applied, the output transistor will respond quickly, providing much higher output power than other types of transistors.

The RN2902FE,LF provides a range of benefits that makes it suitable for different kinds of applications. Some of these benefits include:

  • High speed switching - This is achieved by pre-biasing the junction between the collector and emitter, which makes it possible to switch signals at much faster speeds than normal.
  • High output power - The pre-biased technique provides higher output power than conventional transistors.
  • Low power consumption - The low power consumption of this device makes it ideal for use in portable devices such as cell phones and PDAs.
  • Integrated relay control - This feature allows the device to be used in applications that require the use of a relay.
  • Voltage protection - This technology helps to protect the device from over-voltage and related issues.
  • High temperature operation - The device is designed to operate at high temperatures, making it ideal for use in industrial applications.

The RN2902FE,LF is a versatile device that can be used in a wide range of applications. It is commonly used in signal conditioning, relay control, power amplification, and other high-frequency applications. This device is capable of providing a high level of output power, and the integrated relay control feature makes it suitable for applications where a relay is necessary.

The RN2902FE,LF is an important component in the world of electronics and can be found in a variety of electronic applications. This pre-biased transistor array is extremely useful in various applications and provides the advantages of faster switching speeds and higher output power. Because of these benefits and its wide range of applications, the device is becoming increasingly popular and is being used more and more in today\'s electronic products.

The specific data is subject to PDF, and the above content is for reference

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