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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP3123F-ND	TLP3123(F)	Toshiba Semiconductor and Storage	View more Series: TLP3123 Packaging: Bulk Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 40V Load Current: 1A On-State Resistance (Max): 100 mOhms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	1000 Order	1+: $1.89 10+: $1.7722 25+: $1.575 50+: $1.4963 100+: $1.4175 300+: $1.26 500+: $1.1813 1000+: $1.1025 5000+: $1.0631
TLP2761(E-ND	TLP2761(E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: AC, DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C	1000 Order	125+: $0.4522
TLP2530F-ND	TLP2530(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 2 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 7% @ 16mA Turn On / Turn Off Time (Typ): 300ns, 500ns Input Type: DC Output Type: Transistor Voltage - Output (Max): 15V Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 25mA Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	2307 Order	--
TB62210FNGC8EL- ND	TB62210FNG,C8,E L	Toshiba Semiconductor and Storage	View more Series: * Part Status: Active	1000 Order	2000+: $1.0558
SSM6N7002BFELMT R-ND	SSM6N7002BFE,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250A Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.04
RN4986FELF(CBTR -ND	RN4986FE,LF(CB	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0304
TCR2EN35LFTR-ND	TCR2EN35,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.5V Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	10000 Order	10000+: $0.0548 30000+: $0.0503 50000+: $0.0484 100000+: $0.0473
RN2301LFCT-ND	RN2301,LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	3684 Order	1+: $0.1197 10+: $0.1121 25+: $0.1023 100+: $0.0736 250+: $0.0433 500+: $0.036 1000+: $0.0245
TPC8221-HLQ(S-N D	TPC8221-H,LQ(S	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Power - Max: 450mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	1000 Order	1+: $0
TK35N65WS1F-ND	TK35N65W,S1F	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V Power Dissipation (Max): 270W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	63 Order	1+: $5.1786 30+: $4.2477 120+: $3.8333 510+: $3.2117 1020+: $2.7973
TK14A65WS5X-ND	TK14A65W,S5X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 690A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	81 Order	1+: $2.0601 50+: $1.653 100+: $1.506 500+: $1.2195 1000+: $1.0285
TK560A60YS4X-ND	TK560A60Y,S4X	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 240A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Power Dissipation (Max): 30W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	121 Order	1+: $0.8883 50+: $0.71 100+: $0.6212 500+: $0.4818 1000+: $0.3804
TK39N60W5S1VF-N D	TK39N60W5,S1VF	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 38.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V Power Dissipation (Max): 270W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $5.8779 30+: $4.8195 120+: $4.3494 510+: $3.6441
2SA1013-OT6MIBF (J-ND	2SA1013-O,T6MIB F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V Power - Max: 900mW Frequency - Transition: 50MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92L	1000 Order	1+: $0
2SA949-YONK-1F( M-ND	2SA949-Y,ONK-1F (M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
1SV322(TPH3F)TR -ND	1SV322(TPH3,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz Capacitance Ratio: 4.3 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Base Part Number: 1SV322	3000 Order	3000+: $0.0595
CES388L3FTR-ND	CES388,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 5A @ 40V Capacitance @ Vr, F: 25pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125C (Max) Base Part Number: CES388	16000 Order	8000+: $0.0198 16000+: $0.0169 24000+: $0.0159 56000+: $0.0149 200000+: $0.0132
SSM3K302T(TE85L F)TR-ND	SSM3K302T(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 71 mOhm @ 2A, 4V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
CRY62(TE85LQM)- ND	CRY62(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 6.2V Tolerance: 9.68% Power - Max: 700mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 10A @ 3V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	1000 Order	3000+: $0.1118
HN2S03FE(TE85LF )TR-ND	HN2S03FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Configuration: 3 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 500nA @ 20V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
TK20G60WRVQTR-N D	TK20G60W,RVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 165W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.9776
TK40E10K3S1X(S- ND	TK40E10K3,S1X(S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $1.1157
TB67S111PGHJ-ND	TB67S111PG,HJ	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	2000 Order	1+: $2.961 10+: $2.646 25+: $2.3814 100+: $2.1697 250+: $1.958 500+: $1.7569 1000+: $1.4818 3000+: $1.4077
TC7SZ32FELJ(CTT R-ND	TC7SZ32FE,LJ(CT	Toshiba Semiconductor and Storage	View more Series: TC7SZ Packaging: Tape & Reel (TR) Part Status: Active Logic Type: OR Gate Number of Circuits: 1 Number of Inputs: 2 Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 2A Current - Output High, Low: 32mA, 32mA Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: ESV Package / Case: SOT-553	1000 Order	4000+: $0.0416 8000+: $0.0374 12000+: $0.0333 28000+: $0.0312 100000+: $0.027 200000+: $0.0266
TLP160JFTR-ND	TLP160J(TPR,U,C ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 2500Vrms Voltage - Off State: 600V Static dV/dt (Min): 500V/s Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 1mA (Typ) Turn On Time: 30s Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Supplier Device Package: 6-MFSOP, 4 Lead Approvals: UR	24000 Order	3000+: $0.2304 6000+: $0.2252 15000+: $0.2166
TLP5214(TPETR-N D	TLP5214(TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 32ns, 18ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.7V (Max) Current - DC Forward (If) (Max): 25mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SO Approvals: CQC, CSA, cUL, UL	1000 Order	1500+: $2.7027
DF3A5.6FLFTR-ND	DF3A5.6F,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 2 Voltage - Reverse Standoff (Typ): 2.5V Voltage - Breakdown (Min): 5.3V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 65pF @ 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	3000+: $0.0411
TLP241A(D4LF1F- ND	TLP241A(D4,LF1, F	Toshiba Semiconductor and Storage	View more Series: TLP241A Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.27VDC Voltage - Load: 0V ~ 40V Load Current: 2A On-State Resistance (Max): 150 mOhms Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD	1000 Order	100+: $0.8413
MT3S111(TE85LF) TR-ND	MT3S111(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 11.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 12dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	6000 Order	3000+: $0.1561 6000+: $0.1483 15000+: $0.1422 30000+: $0.1383
RN1106MFV(TL3T) TR-ND	RN1106MFV(TL3,T )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	1+: $0
RN1905LFTR-ND	RN1905,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
TLP387(TPRE-ND	TLP387(TPR,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Turn On / Turn Off Time (Typ): 50s, 15s Rise / Fall Time (Typ): 40s, 15s Input Type: DC Output Type: Darlington Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 1V Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Supplier Device Package: 6-SO	1000 Order	3000+: $0.1834
TBC847BLMTR-ND	TBC847B,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA Current - Collector Cutoff (Max): 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 320mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	1000 Order	3000+: $0.0186 6000+: $0.0167 15000+: $0.0146 30000+: $0.0131 75000+: $0.0116 150000+: $0.0097
TK10A80WS4X-ND	TK10A80W,S4X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 4V @ 450A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 300V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	312 Order	1+: $2.0664 50+: $1.6627 100+: $1.515 500+: $1.2267 1000+: $1.0346
TK11A65WS5X-ND	TK11A65W,S5X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 11.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 450A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	49 Order	1+: $1.4868 50+: $1.2009 100+: $1.0808 500+: $0.8406 1000+: $0.6965
TK10E60WS1VX-ND	TK10E60W,S1VX	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3.7V @ 500A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	146 Order	1+: $2.0286 50+: $1.6302 100+: $1.4852 500+: $1.2027 1000+: $1.0143
2SC2235-Y(T6OMI FM-ND	2SC2235-Y(T6OMI ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC4793HFEF(J-N D	2SC4793,HFEF(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
SSM3K44FSLFTR-N D	SSM3K44FS,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	3000 Order	3000+: $0.0333
1SS352H3FTR-ND	1SS352,H3F	Toshiba Semiconductor and Storage	View more Series: 1SS352 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Type: DESCRIPTION Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76A Supplier Device Package: SC-76-2 Operating Temperature: 125C Operating Temperature - Junction: 125C (Max) Base Part Number: 1SS352	216000 Order	--

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