TK14A65W,S5X

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The TK14A65W,S5X is a field effect power transistor designed for use in applications requiring superior breakdown voltage, avalanche capability, and source-drain diodes. This power transistor is suitable for applications such as off-line switching power supplies, high voltage motor drives, dc-to-dc converters, and lighting ballasts. The device is a power MOSFET constructed with N-channel enhancement mode technology.

Application Field

The TK14A65W,S5X offers designers the industry-standard N-channel MOSFET features. In terms of performance, the device has a high breakdown voltage, a low on-state resistance, and fast switching characteristics. This power transistor is also capable of withstanding higher peak currents and efficiently handling transients. The low gate drive requirement makes the TK14A65W,S5X well-suited for use in power electronics applications.

Due to the excellent performance of the device, the TK14A65W,S5X is ideal for applications such as off-line switching power supplies, high voltage motor drives, lightweight power supplies, motor control circuits, automotive lighting, and other switch-mode power converters. The device can also be used to build logic-level drive circuits that can be controlled by low voltage logic signals, including PWM and other control signals. The low input capacitance and low EMI endures of the device make it suitable for high-volume switching applications.

Working Principle

The TK14A65W,S5X is a power MOSFET that is constructed with N-channel enhancement mode technology. It is designed to reduce switching losses, reduce forward voltage drop, and extend drain current capability. The device utilizes an N-channel MOSFET to switch an electrical load. The gate of the MOSFET is connected to the source of the transistor and is used to control the on state drain current. The drain is connected to the load. When a voltage is applied to the gate:

• The gate voltage turns on the MOSFET, allowing current to flow between the drain and the source.
• The voltage drop across the MOSFET is low enough that the load requires very little power.
• The enhancement mode enables high and low switching currents, enabling fast switching speeds.
• The MOSFET is also self-protected against damage due to the intrinsic internal diode which prevents current damage in case of a short-circuit.

The features of the TK14A65W,S5X make it suitable for high current, high voltage applications. With the device, designers can expect high switching speeds, low voltage drop, and low gate drive requirement. The device is also well-suited for handling transients, making it quite suitable for lighting applications such as automotive lighting.

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