Allicdata Part #: | TK10A80WS4X-ND |
Manufacturer Part#: |
TK10A80W,S4X |
Price: | $ 2.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 800V 9.5A TO220SIS |
More Detail: | N-Channel 800V 9.5A (Ta) 40W (Tc) Through Hole TO-... |
DataSheet: | TK10A80W,S4X Datasheet/PDF |
Quantity: | 312 |
1 +: | $ 2.06640 |
50 +: | $ 1.66270 |
100 +: | $ 1.51496 |
500 +: | $ 1.22672 |
1000 +: | $ 1.03459 |
Vgs(th) (Max) @ Id: | 4V @ 450µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 300V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a type of transistor used as a voltage-controlled electronic switch. The term "MOSFET" is an abbreviation for Metal-Oxide-Semiconductor Field-Effect Transistor. This type of transistor is available in two basic variations: junction MOSFETs (JFETs) and insulated gate MOSFETs (IGMOSTs). A MOSFET can be used to implement control in applications where silicon area, power efficiency and speed are of prime importance. The TK10A80W is an example of a often-used type of single insulated gate MOSFET.
The TK10A80W is built using MOSFETs on a glass-reinforced substrate. The metal gate is coated with an oxide layer, the source and drain contacts are integrated in the glass-reinforced plastic substrate, and the body of the MOSFET is formed by a thin film of silicon dioxide which separates the MOSFET’s source and drain electrodes. To protect against breakdown or overvoltage conditions, a diode is internally connected between the gate and source.
The TK10A80W is a single MOSFET, meaning it has one gate and one drain. It is able to handle a maximum voltage of 8V and has a nominal power dissipation of 1.6W. It has a low On-resistance of 0.34 Ohm, ensuring efficient switching between states. The TK10A80W is designed for use in applications such as switching power supplies, motor control, and automotive loads.
The TK10A80W works on the principle of depletion mode MOSFET. This means that the gate voltage has to be above the threshold voltage of the MOSFET to turn it on and below the threshold voltage to turn it off. This has the effect of forming a depletion layer between the source and drain, thus blocking current flow. However, since the threshold voltage of the MOSFET can be quite high (2-4 V for the typical TK10A80W MOSFETs), the maximum gate drive voltage should be limited to ensure proper operation.
The TK10A80W is an ideal choice for applications requiring an efficient voltage-controlled switch with a low On-resistance. It is not only suitable for power supplies, but can also be used for motor control, automotive loads, and other high-performance applications. It can be used in either a complementary configuration or in a single MOSFET configuration. The TK10A80W MOSFET is an ideal solution for applications that require fast switching speed, low power dissipation, and small size.
The specific data is subject to PDF, and the above content is for reference
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