SSM6N7002BFE,LM

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Introduction:

The SSM6N7002BFE and LM products are Transistors-FETs and MOSFETs-arrays, and are offered in a low-profile PowerPAK® SO-8 and a Mini-DPAK package. These products are ideal for a wide range of applications such as general-purpose switching and amplifier applications.

Application Field:

The SSM6N7002BFE and LM are designed to provide superior performance and significant cost savings in industrial systems, consumer electronics, and telecommunications equipment. The SSM6N7002BFE and LM devices are both designed to operate at high-switch times and to deliver low rds(on) values, making them suitable for high-current switching and amplifier applications. Additionally, they feature logic-level gate inputs compatible with both TTL and CMOS logic.

The SSM6N7002BFE and LM devices are ideal for use in power systems and other applications that require superior levels of performance, such as audio systems and power distributions. These products offer low thermal impedance, high-switch times, low rds(on) values, and excellent logic-level gate inputs. They are also designed to allow for efficient heating, cooling, and current monitoring.

The SSM6N7002BFE and LM devices are perfect for use in high-power applications, due to their low gate-threshold voltage and ESD-protection circuits. Additionally, the SSM6N7002BFE and LM are ideal for low-side switch control and other applications, such as motor control, digital-to-analog conversion, and PWM control.

Working Principle:

The SSM6N7002BFE and LM devices are powered by a voltage source, usually a battery, which is applied between the source terminal and ground. This voltage is used to generate current between the source-drain terminals. The amount of current generated depends on the size of the transistors, the applied voltage and the resistance of the load.

The SSM6N7002BFE and LM devices operate in three distinct modes: cutoff, linear, and saturation. In cutoff mode, no current flows through the device; in linear mode, the current is proportional to the voltage; and in saturation mode, maximum current flows through the device. The current can be increased or decreased by adjusting the gate voltage. The on-state resistance (Rds on) of the device is also affected by the gate voltage; the lower the gate voltage, the lower the Rds on.

The SSM6N7002BFE and LM devices are mainly used as switches, amplifiers, and voltage level shifters, due to their ability to switch very quickly and modulate current flow with relatively low gate voltage. Additionally, they can provide current sensing and thermal protection in certain applications.

Conclusion:

The SSM6N7002BFE and LM products are Transistors-FETs and MOSFETs-arrays, and are designed specifically for power system applications. These products are ideal for a wide range of applications including general-purpose switching and amplifier applications due to their low-threshold gate voltage, ESD protection circuit, low thermal impedance, and high-switching times. Additionally, these products can also provide current sensing and thermal protection in certain applications.

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