2SC2235-Y(T6OMI,FM Allicdata Electronics
Allicdata Part #:

2SC2235-Y(T6OMIFM-ND

Manufacturer Part#:

2SC2235-Y(T6OMI,FM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 800MA 120V TO226-3
More Detail: Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900...
DataSheet: 2SC2235-Y(T6OMI,FM datasheet2SC2235-Y(T6OMI,FM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SC2235-Y(T6OMI,FM) is a bipolar junction transistor (BJT). It belongs to the single transistor class, which can be used in a variety of applications due to its wide range of properties. The device consists of three p-n-p junctions that make up the base-collector-emitter structure.

The 2SC2235-Y(T6OMI,FM) is a NPN silicon BJT and it has a collector current of 800 mA, Collector-Emitter Voltage of 200 V and an Emitter-Base Voltage of 5.5V. It has a DC current gain, hFE, that can reach up to 100 when the Collector current is 10 mA. Its power dissipation is 3 watts.

The device can be used for both linear and switching applications. In the linear operating modes, it is mainly used for class-A, class-AB and class-B audio amplifiers, oscillators and DC power supplies.

In Switching applications, the BJT can help regulate input and output voltages as well as increase efficiency. The circuit can be used to create on/off switches, enable transistors to drive motors, dim lights and control the speed of blowers. The 2SC2235-Y(T6OMI,FM) can also be used in the switching power supply and are used to rectify AC to DC volts.

The working principle of the BJT is similar to an electron tube but with two terminals instead of three. It uses two currents, the collector current IC and the base current IB. When the base current IB is increased, the collector current IC also increases, this is known as the current gain, hFE. When base current IB decreases, the collector current IC also decreases.

The semiconductor material used for this BJT is silicon, which has advantages such as low cost, high current density and high switching speed. It also has a higher thermal resistance than germanium, making it better suited for high temperature operations. This makes the 2SC2235-Y(T6OMI,FM) ideal for use in applications such as motors, electric furnaces, electronic rolls and electric welding machines.

In conclusion, the 2SC2235-Y(T6OMI,FM) is a NPN silicon BJT bipolar junction transistor. It is used in linear and switching applications, with a wide range of properties suitable for various applications. Its working principle is similar to an electron tube, it has a current gain, hFE, and mainly uses two currents, the collector current IC and the base current IB. It is suitable for high temperature operations and is mainly used in motors, electric furnaces, electronic rolls and electric welding machines.

The specific data is subject to PDF, and the above content is for reference

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