RN1905,LF Allicdata Electronics
Allicdata Part #:

RN1905LFTR-ND

Manufacturer Part#:

RN1905,LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1905,LF datasheetRN1905,LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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RN1905, also known as LF application field and working principle, is a kind of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It is a pre-biased, polymer-passivated, multi-NPN BJT array suitable for low-frequency and high-speed operation. It is available in a 4–12 common-emitter configuration and has integrated ESD, latch-up protection and driver capabilities.

Features

The main features of the RN1905 are:

  • Integrated ESD protection and driver capabilities allowing for high-speed operation.
  • Multi-NPN BJT array that provides low-frequency operation.
  • Pre-biased and polymer-passivated process that improves performance.
  • High impedance input that maintains low-noise levels at the input.

Applications

The RN1905 is suitable for a wide range of applications, including low-frequency switching, high-speed PCM, LED lighting, musical instrument amplifiers, and DC dc converters. It is also suitable for driving high-current loads, such as if-amplifiers and base-stations, due to its low-frequency operation.

Working Principle

The RN1905 operates by using a multi-NPN array, providing low-frequency and high-speed operation. A pre-biased and polymer-passivated process is used to improve performance. The device also has integrated ESD protection and driver capabilities, allowing for high-speed operation without compromising the input noise. The RN1905 is a high-gain, high-impedance BJT array and is controlled in the common-emitter configuration.

The RN1905 has a wide range of operating voltages and can be used in a variety of applications because of this. The device can be operated from a range of 4-12V and can be used in a variety of frequencies. It is also capable of withstanding high-temperature environments and is suitable for use in high-frequency and low-power applications. The device also has a high ESD tolerance, making it suitable for use in environments where reliability is a primary concern.

The RN1905 also features an integrated driver circuit as well as ESD and latch-up protection, further improving its performance. The driver circuit allows for high-speed PCM operation, while the ESD and latch-up protection provide additional safety and long-term reliability. The device is also particularly useful for low-power applications, as its low-voltage operation allows for low-power designs.

Conclusion

In conclusion, the RN1905 is a unique type of Transistors - Bipolar (BJT) - Arrays, Pre-Biased, that comes with integrated ESD protection, driver capabilities and latch-up protection. It is suitable for a wide range of applications, including low-frequency switching, high-speed PCM, LED lighting, musical instrument amplifiers and DC DC converters. The RN1905 provides excellent performance for low-power applications due to its low-voltage operation and high ESD tolerance.

The specific data is subject to PDF, and the above content is for reference

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