
Allicdata Part #: | RN1905LFTR-ND |
Manufacturer Part#: |
RN1905,LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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RN1905, also known as LF application field and working principle, is a kind of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It is a pre-biased, polymer-passivated, multi-NPN BJT array suitable for low-frequency and high-speed operation. It is available in a 4–12 common-emitter configuration and has integrated ESD, latch-up protection and driver capabilities.
Features
The main features of the RN1905 are:
- Integrated ESD protection and driver capabilities allowing for high-speed operation.
- Multi-NPN BJT array that provides low-frequency operation.
- Pre-biased and polymer-passivated process that improves performance.
- High impedance input that maintains low-noise levels at the input.
Applications
The RN1905 is suitable for a wide range of applications, including low-frequency switching, high-speed PCM, LED lighting, musical instrument amplifiers, and DC dc converters. It is also suitable for driving high-current loads, such as if-amplifiers and base-stations, due to its low-frequency operation.
Working Principle
The RN1905 operates by using a multi-NPN array, providing low-frequency and high-speed operation. A pre-biased and polymer-passivated process is used to improve performance. The device also has integrated ESD protection and driver capabilities, allowing for high-speed operation without compromising the input noise. The RN1905 is a high-gain, high-impedance BJT array and is controlled in the common-emitter configuration.
The RN1905 has a wide range of operating voltages and can be used in a variety of applications because of this. The device can be operated from a range of 4-12V and can be used in a variety of frequencies. It is also capable of withstanding high-temperature environments and is suitable for use in high-frequency and low-power applications. The device also has a high ESD tolerance, making it suitable for use in environments where reliability is a primary concern.
The RN1905 also features an integrated driver circuit as well as ESD and latch-up protection, further improving its performance. The driver circuit allows for high-speed PCM operation, while the ESD and latch-up protection provide additional safety and long-term reliability. The device is also particularly useful for low-power applications, as its low-voltage operation allows for low-power designs.
Conclusion
In conclusion, the RN1905 is a unique type of Transistors - Bipolar (BJT) - Arrays, Pre-Biased, that comes with integrated ESD protection, driver capabilities and latch-up protection. It is suitable for a wide range of applications, including low-frequency switching, high-speed PCM, LED lighting, musical instrument amplifiers and DC DC converters. The RN1905 provides excellent performance for low-power applications due to its low-voltage operation and high ESD tolerance.
The specific data is subject to PDF, and the above content is for reference
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