Allicdata Part #: | 2SK3309(Q)-ND |
Manufacturer Part#: |
2SK3309(Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 450V 10A TO220FL |
More Detail: | N-Channel 450V 10A (Ta) 65W (Tc) Through Hole TO-2... |
DataSheet: | 2SK3309(Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | TO-220FL |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 450V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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2SK3309 (Q) is an application field of FETs and MOSFETs. It is an enhancement mode power FETs with relatively low Rds(on) and a high breakdown voltage. This single MOSFET is capable of operating as either a switch or an amplifier. In other words, it can be used in both AC and DC applications.
The 2SK3309 (Q) FET is designed for P-channel enhancement mode use. It is a form of metal oxide semiconductor field effect transistor specifically designed to be used in power electronics applications involving the switching between AC and DC voltages. This makes the 2SK3309 (Q) FET a great choice for use in electronic components looking to switch between the two different electrical states of AC and DC.
The 2SK3309 (Q) FET is an N-channel device, meaning it is operational as long as the voltage therein exceeds its threshold voltage when conducting current. P-Channel FETs, on the other hand, are operational as long as the voltage therein is under its threshold voltage and not exceeding it. Because of this, the 2SK3309 (Q) FET is great for amplifier applications, as the input and output of the FET can go in and out of polarity accordingly.
The working principle for the 2SK3309 (Q) FET is similar in nature to any other single MOSFET, in that it functions as a semiconductor. It features an input gate, a drain and a source, and is set up with a positive voltage on the gate, as that is the only way for the FET to be used in P-Channel Enhancement Mode. The threshold voltage of the 2SK3309 (Q) is 4V, and its drain current is 400 mA. The breakdown voltage of the FET is 40 V.
Overall, the uses of the 2SK3309 (Q) FET are quite versatile, as the single MOSFET can be used in AC and DC applications due to its threshold voltage, current rating, breakdown voltage, and pinch-off voltage. It is a great choice for use as either a switch or an amplifier, looking to switch between AC and DC voltages. The 2SK3309 (Q) FET is truly a revolutionary development for semiconductor FETs, and it is only continuing to make improvements for the future of power electronics in both industry and home applications cases.
The specific data is subject to PDF, and the above content is for reference
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