Allicdata Part #: | SSM6N16FUTE85LFTR-ND |
Manufacturer Part#: |
SSM6N16FUTE85LF |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 20V 0.1A US6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 100mA 200mW Su... |
DataSheet: | SSM6N16FUTE85LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05506 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 100mA |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9.3pF @ 3V |
Power - Max: | 200mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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SSM6N16FUTE85LF is a MOSFET device which belongs to the transistor array family. A transistor array consists of several small transistors that are connected together in series or in parallel and are used to increase the current output as well as the voltage gain of a circuit. Unlike other MOSFETs, array type MOSFETs have an advantage of providing a larger current gain than normal MOSFETs since the transistors in the array are connected together in parallel.
The SSM6N16FUTE85LF is a high-voltage low-on-resistance MOSFET device that offers a maximum drain-source voltage of 150V and a maximum drain current of 5A. It is suitable for linear and switching applications and is available in a low profile and low profile plus leadless packages. The device has a low input capacitance of 9.8pF and a gate-source capacitance of 165pF and it also has an on-resistance of 17mΩ.
The SSM6N16FUTE85LF is an N-channel power transistor and it is used in a variety of applications such as in DC-DC converter, voltage regulator, switching power supply, motor control and so on. It is also used for providing a high-speed switch for controlling current and it is capable of switching loads up to 5A. This device is compatible with a wide range of voltage levels up to 150V and it can be used to drive high-side loads and motor in automotive, computing, and industrial applications.
The SSM6N16FUTE85LF works on the principle of operation of MOSFETs which are based on the electric field effect. The operation of MOSFETs relies upon the flow of electrons between the source and the drain. This flow of electrons causes a voltage drop across the channel which is known as a ‘gate voltage.’ This voltage drop across the gate is the controlling factor of the circuit, meaning that by increasing the gate voltage, more current flows between the source and drain.
The SSM6N16FUTE85LF has a low gate drive voltage of 1.8V and it also offers low on-state resistance, low switching time and low power dissipation. It is also relatively easy to use and can provide superior performance in applications requiring high speed, low power and efficient operation, making it an ideal choice for high power and high temperature applications.
In conclusion, the SSM6N16FUTE85LF is a power MOSFET device that belongs to the transistor array family and it is suitable for high power and high temperature applications. It works on the principle of operation of MOSFETs and provides superior performance with a low gate drive voltage and low on-state resistance. It can be used in a variety of applications such as DC-DC converters, voltage regulators, switching power supplies, motor control and so on.
The specific data is subject to PDF, and the above content is for reference
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