Allicdata Part #: | SSM3K7002CFULFTR-ND |
Manufacturer Part#: |
SSM3K7002CFU,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 0.17A SMD |
More Detail: | N-Channel 60V 170mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM3K7002CFU,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02217 |
Series: | U-MOSVII-H |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.9 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.35nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 17pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | USM |
Package / Case: | SC-70, SOT-323 |
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The SSM3K7002CFU,LF is a field-effect transistor (FET) belonging to a category known as the MOSFET (metal-oxide-semiconductor FET). This type of FET is a single transistor that is used for a variety of applications, from digital switches to power amplifiers. The SSM3K7002CFU,LF is an advanced technology metal-oxide-semiconductor field-effect transistor that offers high efficiency and reliability in a wide range of applications.
Application Field
The SSM3K7002CFU,LF is ideal for use in applications such as switching, power amplifiers, audio, low-noise amplifiers and oscillators. The versatility of this transistor makes it suitable for a wide range of applications, including those in industry, consumer electronic devices, and commercial and medical equipment.
The SSM3K7002CFU,LF can be used as a switch for controlling high-frequency signals or controlling low-frequency signals from high voltage power sources. The FET can be used as an amplifier for applications such as audio, low-noise, low-power radio signals or high-power radio signals. Additionally, this type of transistor can be used in oscillator circuits to produce highly reliable and consistent signals for use in communication systems and other applications.
Working Principle
The working principle behind the SSM3K7002CFU,LF involves the use of a gate electrode that controls the flow of current between the source and drain electrodes. When a small voltage is applied to the gate electrode, the gate width is changed, allowing current to flow between the drain and source electrodes. When the voltage applied to the gate electrode is increased, the gate width is decreased and the current is decreased, thus allowing for control and modulation of the current flow.
The SSM3K7002CFU,LF is designed to operate in an environment of very low and stable temperatures and pressures. This ensures that the transistor remains in optimum operational and performance capacity, even when exposed to extreme conditions. As such, the SSM3K7002CFU,LF has consistently been regarded as being highly reliable and efficient for a wide range of applications.
In summary, the SSM3K7002CFU,LF is a single metal-oxide-semiconductor field-effect transistor that offers high efficiency and reliable performance for a variety of applications. This type of transistor is suitable for use in switching, power amplifiers, audio, low-noise amplifiers, and oscillator circuits. The SSM3K7002CFU,LF is designed to operate in an environment of very low and stable temperatures and pressures so that it can remain in optimum operational and performance capacity.
The specific data is subject to PDF, and the above content is for reference
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